SHANGHAI
MICROELECTRONICS CO., LTD.
July 2006
SE4410
N-Channel Enhancement Mode Field Effect Transistor
Revision:A
General Description
The SE4410 uses advanced trench
technology to provide excellent R
DS(ON)
and low
gate charge .This device is suitable for
use as a load switch or in PWM applications
Features
●
●
●
●
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching
Losses
Dual SOIC-8 Surface Mount Package Saves
Board Space
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
Rating
30
±25
Units
V
V
A
W
°C
Drain Current (Note 1)
Total Power Dissipation
Continuous
Pulsed
I
D
P
D
T
J
10
50
2.5
-55 to 150
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE4410
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
TON
(T
J
=25°C unless otherwise noted)
Test Conditions
ID=250μA, VGS=0 V
VDS=24 V, VGS=0 V
VDS=0 V, VGS=±20 V
VDS=VGS
ID=-250μA
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Min
30
Typ
Max
Units
V
OFF/ON CHARACTERISTICS (Note 2)
1
±100
1
-
-
-
20
1160
240
165
14
21
16
25
13.5
VDS=15V,ID=7.5A,VGS=4.5
V
I =5A, dI/dt=100A/μs
S
μA
nA
V
mΩ
S
3
13.5
22
VGS=-10V, ID=10A
VGS=4.5V, ID=5A
VDs=15V, ID=10A
-
-
DYNAMIC PARAMETERS
-
V
GS
=0V, V
DS
=15V, f=1MHz
-
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-
-
-
TOFF
Tr
Tf
Q
g
Q
gs
Q
gd
Qrr
Turn-Off Time
Turn-on Rise Time
Turn-on Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BodyDiode Reverse Recovery Charge
VDS =25V, ID= 1A,VGS =5
V,RGEN = 3.3Ω,R
D
=25Ω
-
-
-
4
7
12
-
nC
Typical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE4410
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE4410
`
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE4410
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
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