Sep 2015
SE720
PNP Low VCEsat Transistor with N-Channel Trench MOSFET
Revision: A
General Description
Combination of PNP low VCEsat Breakthrough in
Small Signal transistor and N-Channel Trench
MOSFET
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 20V
R
DS(ON)
= 500mΩ @ V
GS
=4.5V
R
DS(ON)
= 900mΩ @ V
GS
=2.5V
Pin configurations
See Diagram below
E
B
D
C
G
S
E
B
D
C
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET)
Collector-Emitter breakdown voltage (PNP transistor)
Gate-Source Voltage (MOSFET)
Collector-Base breakdown voltage (PNP transistor)
Emitter-Base breakdown voltage (PNP transistor)
Drain Current(MOSFET)
Total Power Dissipation
Operating Junction Temperature Range
Continuous
Pulsed
@TA=25℃
I
D
P
D
T
J
Symbol
V
DS
BV
CEO
V
GS
VCB
Rating
20
-25
±12
-25
-6
0.3
0.8
2
-55 to 150
Units
V
V
V
V
V
A
W
℃
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE720
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
Static Characteristics
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
I
D
=250μA, V
GS
=0 V
V
DS
= 20V, V
GS
=0V
V
GS
=8V
V
DS
= V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=0.1A
V
GS
=2.5V, I
D
=0.1A
I
SD
=150mA, V
GS
=0V
-
500
900
0.68
20
1
10
2.5
750
1000
1.2
V
μA
nA
V
mΩ
mΩ
V
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=16V,
f=200kHz
120
40
25
pF
pF
pF
PNP Transistor Specifications
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Collector-base breakdown Voltage
Collector-emitter breakdown Voltage
Emitter-base breakdown Voltage
Collector-base breakdown Current
Emitter-base breakdown Current
DC current gain
Collector-emitter saturation voltage
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=-2, I
C
=-500mA
I
C
=-0.8A, I
B
=-10mA
100
-320
-40
-20
-5
-200
-200
300
-500
mV
μA
V
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction to Ambient At Steady State (MOSFET)
Junction to Ambient At Steady State (PNP Transistor)
Typ
-
Max
150
125
Units
℃/W
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE720
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE720
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE720
Package Outline Dimension
DFN2X2X0.75
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Co., Ltd.
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SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add: Building 3, Room 3401-03, No.200 Zhangheng Road,
ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China
Phone:
+86-21-33932402
33932403
33932405 33933508 33933608
Fax: +86-21-33932401
Email:
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Website:
http://www.sino-ic.com
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