SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SE9926
N-Channel Enhancement Mode Field Effect Transistor
Revision:B
External Dimensions
Features
●
V
DS
= 20V,I
D
= 6A
R
DS(ON)
< 37.5mΩ @ V
GS
=2.5V
R
DS(ON)
< 27.5mΩ @ V
GS
=4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Applications
●
Battery protection
●
Load switch
●
Power management
Construction
●
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limits
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
83
℃
/W
Electrical characteristics (Ta=25℃)
Parameter
OFF
CHARACTERISTICS
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
20
0.8
±80
V
μA
nA
I
GSS
SE9926
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=4.5A
0.45
0.65
21
30
1.2
27.5
37.5
V
mΩ
mΩ
S
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=2.5V, I
D
=3.5A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
g
FS
V
DS
=5V,I
D
=4.5A
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note
4)
C
lss
C
oss
C
rss
V
DS
=8V,V
GS
=0V,
F=1.0MHz
600
330
140
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE
CHARACTERISTICS
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=6A,
V=4.5V
V
DD
=10V,I
D
=1A
V
GS
=4.5V,R
GEN
=6Ω
10
11
35
30
10
2.3
3
20
25
70
60
15
nS
nS
nS
nS
nC
nC
nC
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V=0V,I=1.7A
1.7
1.2
V
A
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE9926
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE9926
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE9926
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
电子工程世界
