SHANGHAI
MICROELECTRONICS CO., LTD.
Jan 2008
SEB751G-40
Schottky barrier diode
Features
Small power mold type.
(VMD2)
Low VF
High reliability
Revision:A
Applications
General rectification
Construction
●
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak(60Hz, 1cyc
.
)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Limits
40
30
Unit
V
V
mA
mA
℃
℃
I
O
I
FSM
T
j
T
stg
30
200
125
-40
½
+125
Electrical characteristics (Ta=25℃)
Parameter
Forward voltage
Reverse current
Capacitance
between terminsls
Symbol
V
F
I
R
Ct
Min.
—
—
—
Typ.
—
—
2
Max.
0.37
0.5
—
Unit
V
uA
pF
Conditions
I
F
=1mA
V
R
=30V
VR=1V , f=1MHz
SEB751G-40
Please pay attention to static electricity when handling.
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SEB751G-40
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
电子工程世界
