SED4060GM
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
This type used advanced trench technology
and design to provide excellent RDS(ON) with
low gate charge. It can be used in a wide
variety of application
Features
For a single MOSFET
V
DS
= 40V
R
DS(ON)
= 7mΩ @ V
GS
=10V
Pin configurations
See Diagram below
S
S
S
G
DFN3*3
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
40
±20
60
200
65
-55 to 175
Units
V
V
A
W
℃
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case
Typ
-
Max
5
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SED4060GM
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=40V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=20A
V
DS
=5V, I
D
=20A
1.0
-
1.6
7.5
25
40
1
300
2.2
9.5
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=20V,
f=1MHz
942
309
29
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=10A
V
GS
=10V, V
DS
=20V,
R
GEN
=10Ω, I
D
=10A
V
DS
=20V,
14.5
2
2.5
6
21
5
5
nC
nC
nC
ns
ns
ns
ns
Source-Drain Ratings and Characteristics
V
SD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V,I
S
=20A
TJ=25℃, IF=10A
Di/dt=100A/μs
24
19
1.2
V
ns
nC
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SED4060GM
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SED4060GM
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SED4060GM
Package Outline Dimension
DFN3X3
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
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