SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SESD3ZxxC
Transient Voltage Suppressors for ESD Protection
General Description
The SESD3ZxxC is designed to protect voltage
sensitive components from ESD and transient voltage
events. Excellent clamping capability, low leakage, and
fast response time, make these parts ideal for ESD
protection on designs where board space is at a
premium.
Revision:B
Features
Small Body Outline Dimensions
Low Body Height
Peak Power up to 350 Watts @ 8 x 20 µs Pulse
Low Leakage current
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human
Body Model
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOD-323
Absolute Ratings (T
amb
=25
°
C)
Symbol
Parameter
Value
Units
P
PK
T
L
T
stg
T
op
T
J
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
350
260
-55 to +155
-40 to +125
150
W
°
C
°
C
°
C
°
C
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SESD3ZxxC
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Electrical Characteristics
Ratings at 25° ambient temperature unless otherwise specified.
C
V
BR
Part Numbers
Min.
V
SESD3Z3V3C
SESD3Z5C
SESD3Z12C
SESD3Z15C
SESD3Z24C
5.3
5.8
13.3
16.7
25.1
Typ.
V
5.5
6.7
14.5
18.0
27
Max.
V
5.8
7.8
15.7
19.0
30.0
I
T
V
RWM
I
R
C
Typ.
（Note1）
mA
1
1
1
1
1
V
3.3
5.0
12.0
15.0
24.0
µA
3
1
1
1
1
pF
50
30
16
12
8
1.
Capacitance
is measured at f=1MHz, V
R
=0V,T
A
=25℃.
Typical Characteristics
Fig1. Pulse Waveform
Fig2.Power Derating Curve
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SESD3ZxxC
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
transient to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel
protection elements, connected between the signal lines to ground. As the transient rises above the
operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to
ground. The SESD3ZxxC is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOD-323 package allows design flexibility in the design of high density boards where the
space saving is at a premium. This enables to shorten the routing and contributes to hardening against
ESD.
SOD-323 Mechanical Data
Dimensions
Dim
A
B
C
D
E
F
H
Inches
Min
0.060
0.045
0.060
-
0.012
0.004
-
Max
0.071
0.054
0.107
0.043
0.016
0.010
0.004
Min
1.5
1.2
2.3
-
0.3
0.10
-
Mil
Max
1.8
1.4
2.7
1.1
0.4
0.25
0.10
CONTROLLILNG DIMENSION: MILLIMETERS
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
33932403
33932405
33933508
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ShangHai Sino-IC Microelectronics Co., Ltd.
3.
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