SHANGHAI
MICROELECTRONICS CO., LTD.
June 2008
SESD5L5V
ESD Protection Diode With Ultra-Low Capacitance
Revision:A
General Description
The ESD5L5V is designed to protect voltage sensitive
components that require ultra-low capacitance from ESD
and transient voltage events.Excellent clamping capability,
low capacitance, low leakage, and fastresponse time, make
these parts ideal for ESD protection on designs where
board space is at a premium. Because of its low
capacitance, it is suited for use in high frequency designs
such as USB 2.0 high speed and antenna line applications.
Features
Ultra Low Capacitance 0.5 pF
Low Clamping Voltage
Small Body Outline Dimensions:
Stand-off Voltage: 5 V
Low Leakage
Response Time is Typically < 1.0 ns
IEC61000-4-2 Level 4 ESD Protection
This is a Pb-Free Device
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOD-523
Maximum Ratings
Parameter
IEC 61000-4-2 (ESD) Contact
ESD Voltage
Per Human Body Model
Per Machine Model
Peak Pulse Power (t
p
= 8/20μs) @ T
A
=25℃
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
P
D
T
J
,T
STG
T
L
Symbol
Value
8
25
400
100
-55 to 150
260
Unit
kV
kV
V
W
℃
℃
ShangHai Sino-IC Microelectronics Co., Ltd.
1
SESD5L5V
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics
(T
A
=25℃ unless otherwise noted, V
F
=0.9V Max. @ I
F
=10mA for all types)
Part Numbers
V
BR
Min.
V
SESD5L5V
6.0
I
T
mA
1.0
V
RWM
V
5
I
R
µA
1
V
F
Max.
V
1.0
I
F
mA
10
C
Max.
(Note1)
pF
0.9
1. Capacitance
is measured at f=1MHz, V
R
=0V,T
A
=25℃.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Typical Characteristics
Fig 1. Positive 8kV contact per IEC
61000-4-2-SESD5L5V
Fig 2. Negative 8kV contact per IEC
61000-4-2-SESD5L5V
ShangHai Sino-IC Microelectronics Co., Ltd.
2
SESD5L5V
Figure 3. IEC61000-4-2 Spec
Figure 4. Diagram of ESD Test Setup
SOD-523 Mechanical Data
ShangHai Sino-IC Microelectronics Co., Ltd.
3
SESD5L5V
Dim
A
B
C
D
J
K
S
Millimeters
MIN
1.10
0.70
0.50
0.25
0.07
0.15
1.50
NOM
1.20
0.80
0.60
0.30
0.14
0.20
1.60
MAX
1.30
0.90
0.70
0.35
0.20
0.25
1.70
MIN
0.043
0.028
0.020
0.010
0.0028
0.006
0.059
INCHES
NOM
0.047
0.032
0.024
0.012
0.0055
0.008
0.063
MAX
0.051
0.035
0.028
0.014
0.0079
0.010
0.067
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
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