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SF58GC1

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:扬杰科技(YANGJIE)

厂商官网:http://www.21yangjie.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
扬杰科技(YANGJIE)
包装说明
O-PALF-W2
Reach Compliance Code
unknown
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.7 V
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
600 V
最大反向电流
5 µA
最大反向恢复时间
0.035 µs
表面贴装
NO
端子面层
Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SF51G THRU SF58G
Super Fast Recovery Rectifier
Features
● Ultrafast reverse recovery time
● Low leakage current
● Low switching losses, high efficiency
● High forward surge capability
● Glass passivated chip junction
● Solder dip 275 ° max. 7 s, per JESD 22-B106
C
RoHS
COMPLIANT
Typical Applications
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters
for consumer, computer and telecommunication.
Mechanical Data
Package:
DO-201AD(DO-27)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Color band denotes the cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =60℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
V
RRM
I
F(AV)
V
A
SYMBOL
UNIT
SF51G
SF51G
50
SF52G
SF52G
100
SF53G
SF53G
150
SF54G
SF54G
200
5.0
SF55G
SF55G
300
SF56G
SF56G
400
SF57G
SF57G
500
SF58G
SF58G
600
I
FSM
Tstg
Tj
A
150
-55 ~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
VF
UNIT
V
TEST CONDITIONS
IFM=5.0A
Ta=25℃
IR
μA
Ta=100℃
t
rr
ns
I
F
=0.5A I
R
=1A
I
RR
=0.25A
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
150
35
SF51G
SF52G
SF53G
SF54G
SF55G
SF56G
SF57G
SF58G
0.95
5
1.3
1.7
Reverse Recovery time
Typical junction capacitance
Cj
pF
60
40
1/4
S-A159
Rev.2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SF51G THRU SF58G
Thermal Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Thermal Resistance
SYMBOL
R
θJ -A
UNIT
℃/W
SF51G
SF52G
SF53G
SF54G
15
SF55G
SF56G
SF57G
SF58G
Ordering Information (Example)
PREFERED P/N
SF51G~SF58G
SF51G~SF58G
PACKAGE CODE
D1
C1
UNIT WEIGHT(g)
Approximate 1.05
Approximate 1.05
MINIMUM
PACKAGE(pcs)
1250
250
INNER BOX
QUANTITY(pcs)
1250
250
OUTER CARTON
QUANTITY(pcs)
12500
12500
DELIVERY MODE
Tape
Bulk
Characteristics(Typical)
FIG.1: Io-Ta Curve
5
150
FIG.2: Forward Surge Current Capability
Average Forward Output Current (A)
4
Peak Forward Surge Current (A)
120
8.3ms Single Half Sine Wave
JEDEC Method
90
3
2
60
1
Single
Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375''(9.5mm)
Lead Length
0
0
50
100
100
150
30
0
1
2
4
6
8 10
20
40
60 80 100
Ambient Temperature
(℃)
Number of Cycles
FIG.3: Forward Voltage
100
FIG.4: Typical Reverse Characteristics
100
SF55G-SF56G
Instantaneous Forward Current (A
)
SF51G-SF54G
10
SF57G-SF58G
Instantaneous Reverse Current (uA)
T
j
=125
10
T
j
=100
1.0
1.0
T
j
=25
0.1
0.1
TJ=25
Pulse width=300us
1% Duty Cycle
0.01
0.01
0.6
0.001
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
2/4
S-A159
Rev.2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SF51G THRU SF58G
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
trr
+0.5A
(-)
(+)
(-)
1
Ω
NONINDUCTIV
DUT
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE1)
0
-0.25A
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1M
Ω
22pf
2.Rise Time=10ns max.Sourse Impedance=50
Ω
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
Outline Dimensions
DO-201AD(DO-27)
DO-201AD(DO-27)
Dim
A
B
C
D
Min
8.50
5.00
25.4
1.20
Max
9.50
5.60
/
1.30
Dimensions in millimeters
3/4
S-A159
Rev.2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
SF51G THRU SF58G
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http://
www.21yangjie.com
, or consult your nearest Yangjie’s sales office for further assistance.
4/4
S-A159
Rev.2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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