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SF86

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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SF81
8.0 AMP SUPER FAST RECTIFIERS
THRU
SF88
VOLTAGE RANGE
50 to 600 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Good for switching mode application
.412
(10.5)
MAX.
8.0 Amperes
3.8
φ
+.2
HOLE THRU
.248
(6.3)
TO-220A
.180
(4.6)
.050
(1.27)
.108
(2.75)
.040
(1.0)
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Lead solderable per MIL-STD-202,
method 208 guranteed
* Polarity: As Marked
* Mounting position: Any
* Weight: 2.24 grams
* Both normal and Pb free product are available:
.595
(15.1)
MAX.
.158
(4.0)
MAX.
.200
(5.08)
+
CASE
.550
(14.0)
MIN.
PIN 1
PIN 2
+
.120
(3.05)
PIN 1
+
CASE
PIN 2
Case Negative
Suffix "R"
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
Case Positive
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Tc=100 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 8.0A
Maximum DC Reverse Current
Tc=25 C
at Rated DC Blocking Voltage
Tc=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
SF81
50
35
50
SF82
100
70
100
SF83
150
105
150
SF84
200
140
200
8.0
125
SF85
300
210
300
SF86
400
280
400
SF88
600
420
600
UNITS
V
V
V
A
A
V
µA
µA
nS
pF
C
0.95
10
500
35
50
-65 +150
1.30
1.70
50
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
54
RATING AND CHARACTERISTIC CURVES (SF81 THRU SF88)
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
(+)
25Vdc
(approx.)
( )
1
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
|
|
|
|
|
|
|
|
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
CASE TEMPERATURE,( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
1000
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
3.0
SF
84
REVERSE LEAKAGE CURRENT, (
µ
A)
10
100
Tc=100 C
SF
86
SF
8 1~
5~
1.0
10
SF
8
SF
8
8
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Tc=25 C
0.1
1.0
.01
.4
.6
.8
1.0
1.2
1.4 1.6
1.8
0.1
0
20
40
60
80
100 120 140
FORWARD VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
125
FIG.6-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
PEAK FORWARD SURGE CURRENT,(A)
100
75
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
50
25
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
55
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