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SFH 4736

红外发射器 - 大功率 IR BROAD BAND EMITTER 80 DEGREES

器件类别:光电子/LED    红外线数据通信    红外发射器 - 大功率   

厂商名称:Osram Opto Semiconductor

厂商官网:https://www.osram.com/index-2.jsp

器件标准:

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器件参数
参数名称
属性值
厂商名称
Osram Opto Semiconductor
产品种类
红外发射器 - 大功率
安装风格
SMD/SMT
波长
1050 nm
辐射强度
11 mW/sr
射束角
80 deg
If - 正向电流
350 mA
Vf - 正向电压
2.95 V
功率额定值
1.9 W
封装 / 箱体
SMD-2
最小工作温度
- 40 C
最大工作温度
+ 85 C
封装
Cut Tape
封装
Reel
照明颜色
Infrared
系列
OSLON Black
显示角
80 deg
工厂包装数量
600
文档预览
Produktdatenblatt | Version 1.1
SFH 4736
www.osram-os.com
SFH 4736
OSLON
®
Black
OSLON Black (IR broad band emitter) - 80°
Applications
Infrared Spectroscopy
Features:
Package: clear silicone
Corrosion Robustness Class: 3B
ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Spectral range of emission: (typ) 650 ... 1050 nm
Radiant intensity (λ = 600 - 1050 nm): typ. 11 mW/sr
Viewing angle of 80°
Low thermal resistance (Max. 9 K/W)
Ordering Information
Type
Total radiant flux
1)
typ.
I
F
= 350 mA;
λ
= 600 nm - 1050 nm; t
p
= 20 ms
Φ
e
23 mW
Ordering Code
SFH 4736
Q65112A0833
Preliminary datasheet version
1
Version 0.0
| 2018-08-27
SFH 4736
Maximum Ratings
T
A
= 25 °C
Parameter
Operating temperature
Storage temperature
Junction temperature
Forward current
Surge current
t
p
≤ 1 ms; D = 0
Reverse current
2)
Power consumption
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
For the forward current and power consumption please see “maximum
permissible forward current” diagram
Symbol
T
op
T
stg
T
j
I
F
I
FSM
I
R
P
tot
V
ESD
min.
max.
min.
max.
max.
max.
max.
max.
max.
max.
Values
-40 °C
85 °C
-40 °C
85 °C
125 °C
500 mA
1A
200 mA
1900 mW
2 kV
Preliminary datasheet version
2
Version 0.0
| 2018-08-27
SFH 4736
Characteristics
I
F
= 350 mA; t
p
= 25 ms; T
A
= 25 °C
Parameter
Half angle
Forward voltage
Forward voltage
I
F
= 500 mA; t
p
= 100 µs
Reverse voltage
2)
I
R
= 20 mA
Reverse voltage (ESD device)
2)
Radiant intensity
λ
= 350 - 600 nm
Radiant intensity
λ
= 600 - 1050 nm
Radiant intensity
I
F
= 500 mA; t
p
= 10 ms;
λ
= 350 - 600 nm
Radiant intensity
I
F
= 500 mA; t
p
= 10 ms;
λ
= 600 - 1050 nm
Total radiant flux
1)
λ
= 350 - 600 nm
Total radiant flux
1)
λ
= 600 - 1050 nm
Total radiant flux
1)
I
F
= 500 mA; t
p
= 10 ms;
λ
= 350 - 600 nm
Total radiant flux
1)
I
F
= 500 mA; t
p
= 10 ms;
λ
= 600 - 1050 nm
Spectral flux
λ
= 750 nm
Spectral flux
λ
= 850 nm
Preliminary datasheet version
Spectral flux
λ
= 950 nm
Thermal resistance junction solder point real
3)
Symbol
φ
V
F
V
F
V
R
V
R ESD
I
e
I
e
I
e
I
e
Φ
e
Φ
e
Φ
e
Φ
e
Φ
e,λ
Φ
e,λ
Φ
e,λ
R
thJS
typ.
typ.
max.
typ.
max.
max.
min.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
max.
Values
40 °
2.95 V
3.5 V
3V
3.8 V
1.2 V
45 V
60 mW/sr
11 mW/sr
85 mW/sr
14 mW/sr
120 mW
23 mW
160 mW
29 mW
65 µW/nm
63 µW/nm
60 µW/nm
9.0 K / W
3
Version 0.0
| 2018-08-27
SFH 4736
Relative Spectral Emission
I
rel
= f (λ); I
F
= 350 mA; t
p
= 25 ms
4), 5)
Radiation Characteristics
I
rel
= f (φ)
4), 5)
φ
[ ]
-20°
: 90°
-10°
0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-30°
-40°
-50°
-60°
-70°
Preliminary datasheet version
-80°
0.2
0.1
-90°
0.0
4
Version 0.0
| 2018-08-27
SFH 4736
Forward current
4), 5)
Relative Total Radiant Flux
4), 5)
I
F
= f (V
F
); single pulse; t
p
= 100 µs
Φ
e
e
(350mA) = f (I
F
); single pulse; t
p
= 100 µs
Max. Permissible Forward Current
I
F,max
= f (T
S
); R
thJS
= 9.0 K / W
[ ] 0.5
Permissible Pulse Handling Capability
I
F
= f (t
p
); duty cycle D = parameter; T
S
= 85°C
[ ]
1.0
0.4
0.8
0.3
0.6
0.2
0.4
:D=1
: D = 0,5
: D = 0,2
: D = 0,1
: D = 0,05
: D = 0,02
: D = 0,005
Preliminary datasheet version
0.1
0.2
0.0
0
20
40
60
80
[ ]
0.0
-5
10 10
-4
10
-3
0.01 0.1
1
10 100
[ ]
5
Version 0.0
| 2018-08-27
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