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SFM18PL

1 A, 600 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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SFM11PL
THRU
SFM18PL
1 Amp Super Fast Recovery
Features
For Surface Mount Applications
Low Power Loss, High Efficiency
High Temp Soldering: 260 C for 10 Seconds At Terminals
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant (Note1)("P"Suffix designates
Compliant. See ordering information)
Welding Iron Temp:350
o
C for 3s max.
Storage Condition: Less than 30
o
C,RH<70%
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 600 Volts
SOD-123FL
A
B
Maximum Ratings
Operating Temperature: -50 C to +150 C
Storage Temperature: -50 C to +150 C
Maximum Thermal Resistance;
75
C/W Junction To Ambient.
MCC
Part
Number
SFM11PL
SFM12PL
SFM13PL
SFM14PL
SFM15PL
SFM16PL
SFM17PL
SFM18PL
Device
Marking
S1
S2
S3
S4
S5
S6
S7
S8
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
300V
400V
500V
600V
I
F(AV)
I
FSM
1.0A
30A
Maximum
RMS
Voltage
35V
70V
105V
140V
210V
280V
350V
420V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
300V
400V
500V
600V
C
E
H
D
G
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SFM11PL-14PL
SFM15PL-16PL
SFM17PL-18PL
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
T
a
= 50 C
8.3ms, half sine
DIM
A
B
C
D
E
G
H
V
F
.95V
1.25V
1.70V
5 A
100 A
35ns
10pF
I
FM
= 1.0A;
T
a
= 25 C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
.037
.053
0.95
1.35
.020
.039
0.50
1.00
.010
-----
0.25
-----
-----
.008
----
.20
SUGGESTED SOLDER
PAD LAYOUT
0.093”
NOTE
I
R
Ta = 25 C
Ta = 100 C
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.048”
T
rr
C
J
0.036”
Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
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SFM11PL
THRU SFM18PL
RATING AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
14
SF
M
INSTANTANEOUS FORWARD CURRENT,(A)
.1
SF
M
17
~S
FM
18
1.0
SF
M
15
~S
FM
16
SF
M1
1~
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
Tj=25 C
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
30
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
24
FORWARD VOLT
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
18
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
12
6
(+)
25Vdc
(approx.)
( )
1
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
+0.5A
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|
|
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JUNCTION CAPACITANCE,(pF)
60
50
40
30
20
10
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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