SGM5018
GENERAL DESCRIPTION
The SGM5018 is a high-speed, low-voltage, quad
single-pole/double-throw (SPDT) CMOS analog switch
multiplexer that is designed to operate from a single
+1.8V to +5.5V power supply.
SGM5018 features guaranteed on-resistance (4.5Ω TYP),
on-resistance matching (3.6Ω MAX) between switches
and guaranteed on-resistance flatness over the signal
range (3Ω TYP). This ensures excellent linearity and
low distortion when switching audio signals. Fast
switching speed, coupled with high signal bandwidth
(300MHz), also makes the parts suitable for video
signal switching. CMOS process ensures ultra low
power dissipation, making the parts ideally suited for
portable and battery powered instruments.
SGM5018 is available in Pb-free TSSOP-16 package.
4.5Ω, High Speed, Low Voltage
Quad, SPDT Analog Switch
FEATURES
−
−
−
−
−
−
−
−
−
Low Voltage Operation : 1.8V to 5.5V
R
ON
is Typically 4.5Ω at 5V
Low On-Resistance Flatness
-3dB Bandwidth: 300MHz
Rail-to-Rail Input and Output Operation
Typical Power Consumption (<0.01 µW)
TTL/CMOS Compatible
-40
℃
to +85
℃
Operating Temperature Range
Lead (Pb) Free TSSOP-16 Package
PIN CONFIGURATION (TOP VIEW)
APPLICATIONS
Battery-Powered Systems
USB 1.1 Signal Switching Circuits
Communication Systems
Portable Instrumentation
Audio and Video Switching
Computer Peripherals
Cell Phones
PDAs
FUNCTION TABLE
EN
IN
NO
NC
L
L
H
L
H
√
OFF
ON
ON
OFF
All Switches Open
√
= Don’t Care.
SG Microelectronics Co, Ltd
Tel: 86/10/51798160/80
www.sg-micro.com
REV. A
ORDERING INFORMATION
MODEL
SGM5018
PIN-PACKAGE
TSSOP-16
SPECIFIED
TEMPERATURE
RANGE
-40°C to +85°C
ORDERING
NUMBER
SGM5018YTS/TR
PACKAGE
MARKING
SGM5018YTS
PACKAGE
OPTION
Tape and Reel, 3000
ABSOLUTE MAXIMUM RATINGS
V
+
to GND......................................................................-0.3V to +6V
Analog, Digital voltage range(1)........................- 0.3V to (V
+
+ 0.3V)
Continuous Current NO, NC, or COM ................................±200mA
Peak Current NO, NC, or COM ...........................................±350mA
Operating Temperature Range..................................- 40°C to +85°C
Junction Temperature.............................................................+150°C
Storage Temperature............................................... - 65°C to +150°C
Lead Temperature (soldering, 10s)...........................................+260°C
ESD Susceptibility
HBM..........................................................................................4000V
MM..............................................................................................400V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
(1)
Signals on NC, NO, or COM or IN
X
exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum
current ratings.
PIN DESCRIPTION
NAME
V
+
GND
TSSOP PIN
16
8
FUNCTION
IN
EN
1
15
4,7,9,12
3,6,10,13
2,5,11,14
COM
X
NO
X
NC
X
Power supply
Ground
Digital control pin to connect the COM terminal to the NO
or NC terminals.
Digital Enable Input. Normally connect to GND. Drive to
logic high to set all switches off.
Common terminal
Normally-open terminal
Normally-closed terminal
Note: NO
X
, NC
X
and COM
X
terminal
may be an input or output.
2
SGM5018
ELECTRICAL CHARACTERISTICS
(V
+
= +4.5V to +5.5V, GND = 0V, V
IH
= +1.6V, V
IL
= +0.5V, T
A
= - 40°C to + 85°C. Typical values are at V
+
= +5.0V, T
A
= + 25°C, unless
otherwise noted.)
PARAMETER
ANALOG SWITCH
Analog Signal Range
On-Resistance
On-Resistance Match
Between Channels
On-Resistance Flatness
Source OFF Leakage current
Channel ON Leakage
current
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
Input Leakage Current
DYNAMIC CHARACTERISTICS
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Delay
Off Isolation
Channel-to-Channel
Crosstalk
Bandwidth –3 dB
Charge Injection Select
Input to Common I/O
Channel ON Capacitance
POWER REQUIREMENTS
Power Supply Range
Power Supply Current
V
+
I
+
V
+
= 5.5V, V
IN
= 0V or V
+
- 40°C to +85°C
- 40°C to +85°C
1.8
5.5
1
V
µA
t
ON
t
OFF
t
D
O
ISO
V
COM
= 2V, C
L
= 35pF,
R
L
= 300Ω, Test Circuit2
V
NO
or V
NC
= 3V, R
L
= 300Ω,
C
L
= 35pF, Test Circuit 4
R
L
= 50Ω, f = 10MHz,
1MHz
V
BIAS
= 350mV,
10MHz
V
IN
= 0dBm, Test Circuit5
R
L
= 50Ω, f = 10MHz,
1MHz
V
BIAS
= 350mV,
10MHz
V
IN
= 0dBm, Test Circuit6
R
L
= 50Ω, V
IN
= 0dBm,
V
BIAS
= 350mV, Test Circuit7
V
IN
= GND, R
G
= 0Ω,
Q = C
L
x V
OUT,
C
L
= 1nF, Test Circuit3
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
40
30
18
-70
-50
-90
-60
300
20
42
ns
ns
ns
dB
dB
dB
dB
MHz
pC
pF
V
INH
V
INL
I
IN
V
+
=5.5V, V
IN
= 0V or5.5V
- 40°C to +85°C
- 40°C to +85°C
- 40°C to +85°C
1.6
0.5
1
V
V
µA
V
NO
, V
NC
, V
COM
R
ON
∆R
ON
R
FLAT(ON)
I
NC(OFF)
, I
NO(OFF)
I
NC(ON)
, I
NO(ON)
,
I
COM(ON)
V
+
= 4.5V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 4.5V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 4.5V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 5.5V, V
NO
or V
NC
= 3.3V/ 0.3V,
V
COM
= 0.3V/ 3.3V
V
+
=5.5V, V
COM
= 0.3V/ 3.3V,
V
NO
or V
NC
= 0.3V/ 3.3V, or floating
- 40°C to +85°C
+25°C
- 40°C to +85°C
+25°C
- 40°C to +85°C
+25°C
- 40°C to +85°C
- 40°C to +85°C
- 40°C to +85°C
3
0.8
0
4.5
V
+
7
8
3.6
4.2
3.7
4.5
1
1
V
Ω
Ω
Ω
Ω
Ω
Ω
µA
µA
SYMBOL
CONDITIONS
TEMP
MIN TPY MAX UNITS
X
TALK
BW
Q
C
ON
Specifications subject to changes without notice.
3
SGM5018
ELECTRICAL CHARACTERISTICS
(V
+
= +2.7V to +3.6V, V
IH
= +1.6V, V
IL
= +0.4V, T
A
= - 40°C to +85°C. Typical values are at V
+
= +3.0V, T
A
= + 25°C, unless otherwise
noted.)
PARAMETER
ANALOG SWITCH
Analog Signal Range
On-Resistance
On-Resistance Match
Between Channels
On-Resistance Flatness
Source OFF Leakage current
Channel ON Leakage
current
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
Input Leakage Current
DYNAMIC CHARACTERISTICS
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Delay
Off Isolation
Channel-to-Channel
Crosstalk
Bandwidth –3 dB
Charge Injection Select
Input to Common I/O
Channel ON Capacitance
t
ON
t
OFF
t
D
O
ISO
V
COM
= 2V, C
L
= 35pF,
R
L
= 300Ω, Test Circuit2
V
NO
or V
NC
= 2V, R
L
= 300Ω,
C
L
= 35pF, Test Circuit 4
R
L
= 50Ω, f = 10MHz,
1MHz
V
BIAS
= 350mV,
10MHz
V
IN
= 0dBm, Test Circuit5
R
L
= 50
Ω,
f = 10 MHz,
1MHz
V
BIAS
= 350 mV,
10MHz
V
IN
= 0dBm, Test Circuit6
R
L
= 50Ω, V
IN
= 0dBm,
V
BIAS
= 350mV, Test Circuit7
V
IN
= GND, R
G
= 0Ω,
Q = C
L
x V
OUT,
C
L
=1nF, Test Circuit3
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
48
45
20
-70
-50
-90
-60
300
20
42
ns
ns
ns
dB
dB
dB
dB
MHz
pC
pF
V
INH
V
INL
I
IN
V
+
= 5.5V, V
IN
= 0V or 3.6V
- 40°C to +85°C
- 40°C to +85°C
- 40°C to +85°C
1.5
0.4
1
V
V
µA
V
NO
, V
NC
, V
COM
R
ON
∆R
ON
R
FLAT(ON)
I
NC(OFF)
, I
NO(OFF)
I
NC(ON)
, I
NO(ON)
,
I
COM(ON)
V
+
= 2.7V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 2.7V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 2.7V, V
NO
or V
NC
= 1.2V,
I
COM
= -100mA, Test Circuit 1
V
+
= 3.6V, V
NO
or V
NC
= 3.3V / 0.3V,
V
COM
= 0.3V/ 3.3V
V
+
= 3.6V, V
COM
= 0.3V/ 3.3V,
V
NO
or V
NC
= 0.3V/ 3.3V, or floating
- 40°C to +85°C
+25°C
- 40°C to +85°C
+25°C
- 40°C to +85°C
+25°C
- 40°C to +85°C
- 40°C to +85°C
- 40°C to +85°C
7
1.6
0
11
V
+
15.5
18.5
4
4.6
9.4
13
1
1
V
Ω
Ω
Ω
Ω
Ω
Ω
µA
µA
SYMBOL
CONDITIONS
TEMP
MIN TPY MAX UNITS
X
TALK
BW
Q
C
ON
Specifications subject to changes without notice.
4
SGM5018
TEST CIRCUITS
Test Circuit 1. On Resistance
Test Circuit 2. Switching Times
Test Circuit 3. Charge Injection
5
SGM5018
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