P-Channel Enhancement Mode MOSFET
AS2301
Product Summary
V
(BR)DSS
R
DS(on)MAX
64mΩ@-4.5V
-20V
80mΩ@-2.5V
95mΩ@-1.8V
-3.4A
I
D
Formosa MS
Feature
Advanced trench process technology
High density cell design for ultra low on-resistance
Application
Load Switch for Portable Devices
DC/DC Converter
Package
Circuit diagram
SOT-23
Marking
S1.
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Page 1
Document ID
FM-31500
031
Issued Date
2003/03/08
Revised Date
2018/05/16
Revision
E
Page.
3
P-Channel Enhancement Mode MOSFET
AS2301
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
STG
Formosa MS
Value
-20
±10
-3.4
-14
1
150
-55 ~ +150
Unit
V
V
A
A
W
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
1)
Symbol
Test Condition
Min.
Typ.
Max.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=-250µA
V
DS
=-20V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-3.4A
-20
-1
±100
-0.4
-1.0
64
80
95
Drain-source on-resistance
2)
R
DS(on)
V
GS
=-2.5V, I
D
=-3.0A
V
GS
=-1.8V, I
D
=-2.5A
Dynamic characteristics
Input Capacitance
Output Capacitance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1)
550
V
DS
=-10V,V
GS
=0V,f =1MHz
89
65
4.3
V
DS
=-10V,V
GS
=-4.5V,
I
D
=-3.4A
0.8
1.1
12
V
DD
=-10V, V
GS
=-4.5V,I
D
=-1A,
R
GEN
=2.5Ω
54
15
9
nS
nC
pF
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-Drain Diode characteristics
Diode Forward Current
Diode Forward voltage
Notes:
1)
2)
Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
Guaranteed by design, not subject to production testing.
I
S
V
DS
V
GS
=0V, I
S
=-3.4A
-3.4
-1.2
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Page 2
Document ID
FM-31500
031
Issued Date
2003/03/08
Revised Date
2018/05/16
℃
℃
Unit
V
µA
nA
V
mΩ
A
V
Revision
E
Page.
3
、
P-Channel Enhancement Mode MOSFET
AS2301
SOT-23 Package Information
Formosa MS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950 TYP.
1.800
0.550 REF.
0.300
0.500
2.000
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Dimensions In Inches
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.037 TYP.
0.
0.071
0.022 REF.
0.
0.012
0.020
0.079
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
http://www.formosagr.com
TEL:886-755-27188611
FAX:886-755-27188568
Page 3
Document ID
FM-31500
031
Issued Date
2003/03/08
Revised Date
2018/05/16
Revision
E
Page.
3
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