SI2301
-20V P-Channel Enhancement Mode MOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.3A
RDS(ON), Vgs@-2.5V, Ids@-2.0A
130m
Ω
190m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.00
2.30
2.50
1.20
1.40
0.30
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
S
Millimeter
Min.
1.80
0.90
0.10
0.35
0.92
0°
Max.
2.00
1.1
0.20
0.70
0.98
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
2)
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
TA = 75
o
C
2)
-20
±8
-2.3
-8
1.25
0.8
-55 to 150
100
166
o
V
A
P
D
T
J
, T
stg
R
thJA
W
o
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
3)
C/W
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
3)
Surface Mounted on FR4 Board.
- 1-
2012-7-8
SI2301
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
1)
1)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
fs
V
GS
= 0V, I
D
= -250uA
V
GS
= -4.5V, I
D
= -2.3A
V
GS
= -2.5V, I
D
= -2.0A
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V TJ=55
V
GS
= ± 8V, V
DS
= 0V
V
DS
= -5V, I
D
= -2.3A
o
-20
105
145
-0.45
-1
130
V
mΩ
190
V
uA
-10
±100
6.5
nA
S
C
Q
g
Q
gs
Q
gd
t
d(on)
5.8
V
DS
= -6V, I
D
^
-2.3A
V
GS
= -4.5V
1.7
13
V
DD
= -6V, RL=6Ω
I
D
^
-1.A, V
GEN
= -4.5V
R
G
= 6
Ω
36
ns
42
34
415
V
DS
= -6V, V
GS
= 0V
223
f = 1.0 MHz
87
pF
0.85
nC
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
V
SD
I
S
= -1.0A, V
GS
= 0V
-0.8
-1.6
A
-1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
- 2-
2012-7-8
SI2301
10
_
Output Characteristics
V
GS
= 5, 4.5, 4, 3.5, 3 V
2.5 V
I D - Drain Current (A)
10
Transfer Characteristics
8
I D - Drain Current (A)
8
T
C
= - 55_C
6
2V
6
25_C
125_C
4
4
2
0, 0.5, 1 V
1.5 V
2
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
0.6
0.5
r DS(on)- On-Resistance (
W
)
0.4
0.3
On-Resistance vs. Drain Current
1000
Capacitance
800
C - Capacitance (pF)
600
C
iss
400
C
oss
200
C
rss
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
0.1
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
5
V
DS
= 6 V
I
D
= 2.8 A
V GS - Gate-to-Source Voltage (V)
4
Gate Charge
1.8
1.6
r DS(on)- On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
- 50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.8 A
3
2
1
0
0
2
4
6
8
0
50
100
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
- 3-
2012-7-8
SI2301
10
Source-Drain Diode Forward Voltage
0.6
0.5
r DS(on)- On-Resistance (
W
)
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
T
J
= 150_C
0.4
0.3
0.2
0.1
0.0
I
D
= 2.8 A
T
J
= 25_C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.4
0.3
V GS(th) Variance (V)
0.2
0.1
0.0
- 0.1
- 0.2
- 50
Threshold Voltage
14
12
10
Power (W)
8
6
4
2
0
Single Pulse Power
I
D
= 250
mA
T
C
= 25_C
Single Pulse
0
50
T
J
- Temperature (_C)
100
150
0.01
0.10
1.00
Time (sec)
10.00
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.05
0.02
Single Pulse
10
-3
10
-2
10
-1
1
10
30
0.1
0.01
10
-4
Square Wave Pulse Duration (sec)
- 4-
2012-7-8
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