SI2310
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@5.0A < 28mΩ
RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
G
Millimeter
Min.
Max.
2.80
3.00
2.30
2.50
1.20
1.40
0.30
0.50
0
0.10
0.45
0.55
S
Millimeter
Min.
1.80
0.90
0.10
0.35
0.92
0°
Max.
2.00
1.1
0.20
0.70
0.98
10°
REF.
A
B
C
D
E
F
REF.
G
H
K
J
L
M
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance,Junction-to-Ambient (Note 2)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
Limit
20
±10
5.0
13.5
1.25
-55 To 150
100
Unit
V
V
A
A
W
℃
℃
/W
- 1-
2012-7-8
SI2310
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
20
-
22
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
Condition
V
GS
=±10V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5V, I
D
=4.5 A
V
GS
=4.5V, I
D
=5A
V
DS
=15V,I
D
=5A
Min
-
0.4
-
-
-
-
-
-
-
Typ
-
0.65
27
20
25
780
140
80
9
30
35
10
11.4
2.3
2.9
-
-
Max
±100
0.8
35
28
-
-
-
-
-
-
-
-
-
-
-
1.2
5
Unit
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
V
DS
=10V,V
GS
=0V,
F=1.0MHz
V
DD
=10V,I
D
=1A
V
GS
=4.5V,R
GEN
=6Ω
-
-
-
-
V
DS
=10V,I
D
=5A,V
GS
=4.5V
-
-
V
GS
=0V,I
S
=2A
-
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
- 2-
2012-7-8
SI2310
Typical Electrical and Thermal Characteristics
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
- 3-
2012-7-8
SI2310
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
- 4-
2012-7-8
SI2310
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
- 5-
2012-7-8
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