SK07N65B-TF
650V N-ch Planar MOSFET
General Features
RoHS Compliant
R
DS(ON),typ.
=1.2 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
650V
R
DS(ON),Typ.
1.2Ω
I
D
7.0A
Applications
Adaptor
Charger
SMPS Standby Power
G
D
S
TO-220F
Ordering Information
Part Number
SK07N65B-TF
Package
TO-220F
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
Derating Factor above 25℃
T
L
T
PAK
T
J
& T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Power Dissipation
T
C
=25℃ unless otherwise specified
SK07N65B-TF
650
Unit
V
±30
7.0
A
28
550
42
0.34
300
260
-55 to 150
mJ
W
W/℃
℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SK07N65B-TF
2.98
℃/W
100
Unit
REV.08
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8
SK07N65B-TF
Electrical Characteristics
OFF Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source Breakdown Voltage
Min.
650
--
I
DSS
Drain-to-Source Leakage Current
--
--
I
GSS
Gate-to-Source Leakage Current
--
--
-100
--
--
100
+100
nA
V
GS
=-30V, V
DS
=0V
Typ.
--
--
--
1
uA
T
J
=25℃ unless otherwise specified
Max.
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V,
T
J
=125℃
V
GS
=+30V, V
DS
=0V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Min.
--
2.0
--
Typ.
1.2
--
11
1.40
4.0
--
T
J
=25℃ unless otherwise specified
Max.
Unit
Ω
V
S
Test Conditions
V
GS
=10V, I
D
=3.0A
V
DS
=V
GS
, I
D
=250uA
VDS=30V,ID=3.5A
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
1120
10
90
20
5
5
Max.
Unit
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
--
--
--
--
--
--
--
--
--
--
--
--
nC
V
DD
=325V,
I
D
=7A, V
GS
=0 to 10V
pF
Resistive Switching Characteristics
Symbol
td
(ON)
t
rise
td
(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min.
Typ.
12
12
18
10
Max.
Unit
Test Conditions
--
--
--
--
2
of
8
--
--
ns
V
DD
=325V,
I
D
=7A,
V
GS
=10V
Rg=4.7Ω
--
--
REV.08
SK07N65B-TF
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
[2]
Pulsed Source Current
[2]
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
[1] T
J
=+25 to +150
[2] Pulse width≤380µs; duty cycle≤2%.
T
J
=25℃ unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
--
350
1.1
Max.
7.0
Unit
A
Test Conditions
Integral pn-diode
in MOSFET
I
S
=7A, V
GS
=0V
V
GS
=0V
I
F
=7A, di/dt=100A/μs
28
1.5
--
--
V
ns
uC
Note:
REV.08
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8
SK07N65B-TF
Typical Characteristics
REV.08
4
of
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SK07N65B-TF
REV.08
5
of
8
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