首页 > 器件类别 > 分立半导体 > 肖特基二极管

SL14-M

直流反向耐压(Vr):40V 平均整流电流(Io):1A 正向压降(Vf):400mV @ 1A

器件类别:分立半导体    肖特基二极管   

厂商名称:台湾美丽微(FMS)

厂商官网:http://www.formosagr.com/

下载文档
器件参数
参数名称
属性值
直流反向耐压(Vr)
40V
平均整流电流(Io)
1A
正向压降(Vf)
400mV @ 1A
文档预览
Chip Low VF Schottky Barrier Rectifier
SL12-M THRU SL14-M
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 1
DS-121653
Chip Low VF Schottky Barrier Rectifier
SL12-M THRU SL14-M
1.0A Low VF Surface Mount
Schottky Barrier Rectifiers - 20V-40V
Package outline
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. SL12-Μ-H
Formosa MS
SOD-123
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.075(1.9)
0.060(1.5)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123 / MINI SMA
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.018 gram
0.028(0.7) Typ.
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
C
J
T
STG
-65
130
+175
MIN.
TYP.
MAX.
1.0
30
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
f=1MHz and applied 4V DC reverse voltage
Reverse current
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
20
30
40
V
RMS
*2
(V)
14
21
28
1.0
mA
pF
O
C
SYMBOLS
SL12-M
SL13-M
SL14-M
*3
V
R
(V)
20
30
40
*4
V
F
(V)
0.38
0.40
0.40
Operating
temperature
T
J
, (
O
C)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=1.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 2
DS-121653
Rating and characteristic curves (SL12-M THRU SL14-M)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
10
12
-M
1.0
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
SL
13
-M
3.0
SL
/S
L1
4-
M
LEAD TEMPERATURE (°C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
1000
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
100
350
300
250
200
150
100
50
0
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
T
J
=75 C
1
T
J
=25 C
.1
0
20
40
60
80
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 3
DS-121653
Chip Low VF Schottky Barrier Rectifier
SL12-M THRU SL14-M
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
SL12-M
SL13-M
SL14-M
Marking code
L2
L3
L4
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SOD-123
A
0.075 (1.90)
B
0.055 (1.40)
C
0.075 (1.90)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 4
DS-121653
Chip Low VF Schottky Barrier Rectifier
SL12-M THRU SL14-M
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SOD-123
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
1.90
3.90
1.68
1.50
-
-
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Page 5
DS-121653
查看更多>