SL3N06
N-Channel
Power MOSFET
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage
Gate- Source Voltage
Drain Current
-
continuous
Drain Current-pulsed
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
=
25℃
Derate above25℃
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
1380
3.8
R
Θ
JA
T
J
,
T
stg
90
Unit
mW
mW/℃
℃/W
Symbol
BV
DSS
V
GS
I
DR
I
DRM
Max
60
+20
3
10
Unit
V
V
A
A
150℃,-55to+150℃
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1
SL3N06
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted )
Characteristic
Drain-Source Breakdown Voltage
(I
D
=250uA,V
GS
=0V)
Gate Threshold Voltage
(I
D
=250uA,V
GS
= V
DS
)
Diode Forward Voltage Drop
(I
SD
=1A,V
GS
=0V)
Zero Gate Voltage Drain Current
(V
GS
=0V, V
DS
= 60V)
Gate Body Leakage
(V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
(I
D
=3A,V
GS
=10V)
(I
D
=2A,V
GS
=4.5V)
Input Capacitance
(V
GS
=0V, V
DS
=25V,f=1MHz)
Common Source Output Capacitance
(V
GS
=0V, V
DS
=25V,f=1MHz)
Symbol
BV
DSS
V
GS(th)
V
SD
I
DSS
I
GSS
R
DS(ON)
C
ISS
C
OSS
t
(on)
t
(off)
Min
60
1
—
—
—
Typ
—
—
—
—
—
Max
—
3
1.5
1
+100
Unit
V
V
V
u
A
n
A
—
—
—
—
—
—
—
—
—
—
90
120
550
125
40
80
mΩ
pF
pF
ns
ns
Turn-ON Time
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
Turn-OFF Time
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width<300μs; Duty Cycle<2.0%.
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2
SL3N06
SOT-23 Package Information
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950TYP
1.800
0.550REF
0.300
0°
0.500
8°
2.000
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
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