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SLESD5Z5V

极性:Unidirectional 峰值脉冲电流(10/1000us):- 箝位电压:- 击穿电压(最小值):6.0V 反向关断电压(典型值):5V

器件类别:分立半导体    TVS二极管   

厂商名称:萨科微(Slkor)

厂商官网:http://www.slkormicro.com/

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器件参数
参数名称
属性值
极性
Unidirectional
击穿电压(最小值)
6.0V
反向关断电压(典型值)
5V
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SLESD5Z Series
Transient Voltage Suppressors for ESD Protection
General Description
The SLESD5Z Series are designed to protect voltage
sensitive components from ESD and transient voltage
events. Excellent clamping capability, low leakage, and
fast response time, make these parts ideal for ESD
protection on designs where board space is at a
premium.
Features
Small Body Outline Dimensions
Low Body Height
Stand−off Voltage: 3.3 V
12.0 V
Peak Power up to 200 Watts @ 8 x 20 µs
Pulse
Low Leakage
Response Time is Typically < 1 ns
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOD-523
Absolute Ratings
(T
amb
=25°C )
Symbol
P
PP
T
L
T
stg
T
op
T
j
Parameter
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
ESD Voltage
Per Human Body Model
Per Machine Model
air discharge
contact discharge
Value
200
260
-55 to +155
-40 to +125
150
±15
±8
40
25
400
Units
W
°C
°C
°C
°C
kV
A
kV
V
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1
SLESD5Z Series
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
Part Numbers
Min.
V
SLESD5Z3V3
SLESD5Z5V
SLESD5Z6V
SLESD5Z7V
SLESD5Z12V
5.0
6.0
6.8
7.5
13.5
V
BR
Typ.
V
6.0
6.6
7.4
8.1
14.2
Max.
V
7.0
7.1
7.9
8.6
15.0
I
T
V
RWM
I
R
V
F
Max.
V
1.25
1.25
1.25
1.25
1.25
I
F
C
Typ. 0v
bias
mA
200
200
200
200
200
pF
35
30
30
25
25
mA
1
1
1
1
1
V
3.0
5.0
6.0
7.0
12.0
µA
1
1
1
1
1
*Surge current waveform per Figure 1.
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25℃.
Typical Characteristics
Fig1. Pulse Waveform
Fig2.Power Derating Curve
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SLESD5Z Series
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
transient to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection
elements, connected between the signal line to ground. As the transient rises above the operating voltage of
the device, the TVS becomes a low impedance path diverting the transient current to ground. The SLESD5Z
Series is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOD-523 package allows design flexibility in the design of high density boards where the space
saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD
.
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SLESD5Z Series
SOD-523 Mechanical Data
Dim
A
B
C
D
J
K
S
Millimeters
MIN
1.10
0.70
0.50
0.25
0.07
0.15
1.50
NOM
1.20
0.80
0.60
0.30
0.14
0.20
1.60
MAX
1.30
0.90
0.70
0.35
0.20
0.25
1.70
MIN
0.043
0.028
0.020
0.010
0.0028
0.006
0.059
INCHES
NOM
0.047
0.032
0.024
0.012
0.0055
0.008
0.063
MAX
0.051
0.035
0.028
0.014
0.0079
0.010
0.067
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