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SM5819

1 A, 40 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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SM5817
THRU
SM5819
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 40 Volts
CURRENT
FEATURES
* Low forward voltage drop
* Low leakage current
* High reliability
1.0 Ampere
DO-213AB
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Metallurgically bonded construction
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.015 grams
* Both normal and Pb free product are available:
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
.205(5.2)
.190(4.8)
.024(.60)
.018(.46)
SOLDERABLE
ENDS
.105(2.7)
.095(2.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 2
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
SM5817
20
14
20
SM5818
30
21
30
1.0
25
SM5819
40
28
40
UNITS
V
V
V
A
A
V
uA
mA
pF
C/W
C
C
0.45
0.55
500
10
110
80
-65 +125
-65 +150
0.60
Ta=100 C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient.
216
RATING AND CHARACTERISTIC CURVES (SM5817 THRU SM5819)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
17
58
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
SM
58
3.0
SM
18
~S
M
58
19
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
25
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
20
FORWARD VOLTAGE,(V)
15
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
10
5
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
100
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
10
FIG.5-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
1.0
Tj=75 C
.1
Tj=25 C
.01
0
JUNCTION CAPACITANCE,(pF)
20
40
60
80
100 120 140
.01
.05
.1
.5
1
5
10
50
100
PERCENTAGE RATED PEAK REVERSE VOLTAGE
REVERSE VOLTAGE,(V)
217
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