SMAJ SERIES
SMAG Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
HD AK 60
Features
●
P
PP
400W
5.0V- 440V
●
V
RWM
●
Glass passivated chip
Applications
●
Clamping Voltage
Marking
●
SMAJ
XXCA/XXA/XX
XX
:
From 5.0 To 440
SMAG
Bi-directional
Uni-direction
Item
Peak power dissipation
Peak pulse current (1)
Power dissipation
Symbol
P
PPM
I
PPM
P
D
Unit
W
A
W
Conditions
with a 10/1000us waveform
with a 10/1000us waveform
Max
400
See Next Table
1.0
On infinite heat sink at T
L
=75℃
Peak forward surge current(2)
I
FSM
A
8.3 ms single half sine-wave unidirectional only
40
Operating junction and
storage temperature range
T
J
,T
STG
℃
-55 to +150
Electrical Characteristics（Ta=25
℃
Unless otherwise specified）
Item
Maximum instantaneous forward
Voltage (3)
Symbol
V
F
R
θJL
Unit
V
℃/W
℃/W
Conditions
at 25A for unidirectional only
junction to lead
junction to ambient， L
Lead
= 10 mm
Max
3.5/5.0
30
120
Thermal resistance
R
θJA
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25
℃
per Fig.2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
H
igh Diode Semiconductor
1
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Part
Number(Uni)
Part
Number(Bi)
V
BR
@I
T
Breakdown Voltage V
BR
@I
T
IT
(1)
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Min(V)
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ19
SMAJ19A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ5.0C
SMAJ5.0CA
(4)
SMAJ6.0C
SMAJ6.0CA
SMAJ6.5C
SMAJ6.5CA
SMAJ7.0C
SMAJ7.0CA
SMAJ7.5C
SMAJ7.5CA
SMAJ8.0C
SMAJ8.0CA
SMAJ8.5C
SMAJ8.5CA
SMAJ9.0C
SMAJ9.0CA
SMAJ10C
SMAJ10CA
SMAJ11C
SMAJ11CA
SMAJ12C
SMAJ12CA
SMAJ13C
SMAJ13CA
SMAJ14C
SMAJ14CA
SMAJ15C
SMAJ15CA
SMAJ16C
SMAJ16CA
SMAJ17C
SMAJ17CA
SMAJ18C
SMAJ18CA
SMAJ19C
SMAJ19CA
SMAJ20C
SMAJ20CA
SMAJ22C
SMAJ22CA
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
21.1
21.1
22.2
22.2
24.4
24.4
Max (V)
7.30
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.20
9.21
10.90
9.83
11.50
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
25.7
23.3
27.1
24.5
29.8
26.9
I
R
@V
WM
Maximum
Reverse
Leakage I
R (3)
(μA)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
V
RWM
Working Peak
Reverse
Voltage
V
RWM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
19.0
19.0
20.0
20.0
22.0
22.0
IPP
Maximum
Reverse Surge
Current IPP
(2)
(A)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.1
27.8
23.6
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.8
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.7
13.0
11.1
12.3
10.1
11.3
Maximum
Clamping
Voltage Vc
@ I
PP
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
30.8
30.8
35.8
32.4
39.4
35.5
H
igh Diode Semiconductor
2
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Part
Number(Uni)
Part
Number(Bi)
V
BR
@I
T
Breakdown Voltage V
BR
@I
T
Min(V)
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
88.9
88.8
94.4
94.4
Max (V)
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102.0
92.1
106.0
95.8
108.8
97.6
115
104
IT
(1)
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
R
@V
WM
Maximum
Reverse
Leakage I
R (3)
(μA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
V
RWM
Working Peak
Reverse
Voltage
V
RWM
(V)
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40.0
40.0
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
80.0
80.0
85.0
85.0
IPP
Maximum
Reverse Surge
Current IPP
(2)
(A)
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.6
5.2
4.4
4.9
4.1
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.8
3.1
2.6
2.9
Maximum
Clamping
Voltage Vc
@ I
PP
(V)
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103.0
93.6
107.0
96.8
114.0
103.0
125.0
113.0
134.0
121.0
139.0
126.0
143.2
129.0
151.0
137.0
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ80
SMAJ80A
SMAJ85
SMAJ85A
SMAJ24C
SMAJ24CA
SMAJ26C
SMAJ26CA
SMAJ28C
SMAJ28CA
SMAJ30C
SMAJ30CA
SMAJ33C
SMAJ33CA
SMAJ36C
SMAJ36CA
SMAJ40C
SMAJ40CA
SMAJ43C
SMAJ43CA
SMAJ45C
SMAJ45CA
SMAJ48C
SMAJ48CA
SMAJ51C
SMAJ51CA
SMAJ54C
SMAJ54CA
SMAJ58C
SMAJ58CA
SMAJ60C
SMAJ60CA
SMAJ64C
SMAJ64CA
SMAJ70C
SMAJ70CA
SMAJ75C
SMAJ75CA
SMAJ78C
SMAJ78CA
SMAJ80C
SMAJ80CA
SMAJ85C
SMAJ85CA
H
igh Diode Semiconductor
3
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Part Number
(Uni)
Part Number
(Bi)
V
BR
@I
T
Breakdown Voltage V
BR
@I
T
IT
(1)
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Min(V)
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ140
SMAJ140A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ180
SMAJ180A
SMAJ190
SMAJ190A
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
SMAJ440A
SMAJ90C
SMAJ90CA
SMAJ100C
SMAJ100CA
SMAJ110C
SMAJ110CA
SMAJ120C
SMAJ120CA
SMAJ130C
SMAJ130CA
SMAJ140C
SMAJ140CA
SMAJ150C
SMAJ150CA
SMAJ160C
SMAJ160CA
SMAJ170C
SMAJ170CA
SMAJ180C
SMAJ180CA
SMAJ190C
SMAJ190CA
SMAJ200CA
SMAJ220CA
SMAJ250CA
SMAJ300CA
SMAJ350CA
SMAJ400CA
SMAJ440CA
100
100
111
111
122
122
133
133
144
144
155
155
167
167
178
178
189
189
200
200
211
211
224
246
279
335
391
447
492
Max (V)
122
111
136
123
149
135
163
147
176
159
190
171
204
185
218
197
231
209
244
220
258
232
247
272
309
371
432
494
543
I
R
@V
WM
Maximum
Reverse
Leakage I
R (3)
(μA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
RWM
Working Peak
Reverse
Voltage
V
RWM
(V)
90.0
90.0
100.0
100.0
110.0
110.0
120.0
120.0
130.0
130.0
140.0
140.0
150.0
150.0
160.0
160.0
170.0
170.0
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
IPP
Maximum
Reverse Surge
Current IPP
(2)
(A)
2.5
2.7
2.2
2.4
2.0
2.2
1.8
2.1
1.7
1.9
1.6
1.7
1.5
1.6
1.4
1.5
1.3
1.4
1.2
1.3
1.2
1.3
1.2
1.1
1.0
0.8
0.7
0.6
0.5
Maximum
Clamping
Voltage Vc
@ I
PP
(V)
160.0
146.0
179.0
162.0
196.0
177.0
214.0
193.0
231.0
209.0
250.6
226.8
268.0
243.0
287.0
259.0
304.0
275.0
322.2
291.6
340.1
307.8
324.0
356.0
405.0
486.0
567.0
648.0
713.0
Notes:
(1) t
p
≤50ms
Pulse test: t
p
≤50ms
(2) Surge current waveform per Fig. 3 and derated per Fig.2.
(3) For bi-directional types having VWM of 10 V and less, the I
R
limit is doubled
(4) For the bi-directional SMAJ5.0CA, the maximum V
BR
is 7.25 V
H
igh Diode Semiconductor
4
Typical Characteristics
FIG1:Peak Pulse Power Rating Curve
PPPM(KW)
100
3
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
FIG2: Pulse Power or Current vs. Initial Junction Temperature
PPP or IPP(%)
100
75
10
50
1.0
25
0.2×0.2"(5.0×5.0mm)
Copper Pad Areas
0.1
1
10
10
2
10
3
10
4
td(μs)
0.1
0
0
25
50
75
100
125
150
175
200
TJ
（℃）
FIG4:Typical Transient Thermal Impedance
Rth(
℃
/W)
1000
FIG3: Pulse Waveform
IPPM(%)
150
tr=10μs
Peak Value
IPPM
TJ=25
℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
100
100
Half Value - IPP
2
IPPM
50
10/1000μs Waveform as
Defined by R.E.A.
10
td
0
1
0
1.0
2.0
3.0
4.0
t（ms）
0.001
0.01
0.1
1
10
100
1000
tp(s)
FIG5: Maximum Non-Repetitive Surge Current
IFSM(A)
80
60
40
TJ=TJMax.
8.3ms Single Half Sine-Wave
PD(W)
100
1.2
1.0
0.8
0.6
0.4
0.2
FIG6:Steady State Power Dissipation
20
10
0
5
10
100
Number of Cycles
0
0
25
50
75
100
125
150
175
200
TL(
℃
)
H
igh Diode Semiconductor
5
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