SPD9103W
SPD9103W
1 Lines, Bi-directional, low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The SPD9103W is a low capacitance TVS (Transient Voltage
Suppressor) array designed to protect high speed data
interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
and
transmission
lines
from
over-stress
caused
by
Electrostatic Discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
The SPD9103W incorporates low capacitance steering
diodes that reduce the typical capacitance to 1pF per line.
The SPD9103W may be used to provide ESD protection up
to ±30kV (contact discharge) according to IEC61000-4-2,
and withstand peak pulse current up to 20A (8/20μs)
according to IEC61000-4-5.
The SPD9103W is available in SOD-323 package. Standard
products are Pb-free and Halogen-free.
Circuit diagram
SOD-323
Pin1
Pin2
Features
Stand-off voltage: 3.3V Max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact discharge)
IEC61000-4-4 (EFT): 40A - 5/50ns
IEC61000-4-5 (surge): 20A
(8/20μs).
Low capacitance: C
J
= 1pF typ.
Ultra-low leakage current: I
R
= 0.1nA typ.
Low clamping voltage.
Solid-state silicon technology
Pin1
W*
Pin2
W = Device code
* = Month code ( A~Z)
Marking (Top View)
Order information
Device
SPD9103W-2/TR
Package
SOD-323
Shipping
3000/Tape&Reel
Applications
10/100 Ethernet
STB
Router
Networking
Modem
Will Semiconductor Ltd.
1
Revision 1.0, 2013/12/30
SPD9103W
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Operation junction temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
L
T
STG
Rating
340
20
±30
±30
125
260
-55~150
Unit
W
A
kV
o
o
o
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
*-
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Symbol
V
RWM
I
R
V
BR
V
RWM
= 3.3V
I
T
= 1mA
I
PP
= 1A,
Clamping voltage
1)
Condition
Min.
Typ.
Max.
3.3
Unit
V
nA
V
0.1
4.0
100
t
p
= 8/20μs
t
p
= 8/20μs
8
10
17
3
V
V
V
pF
V
CL
I
PP
= 5A,
I
PP
= 20A, t
p
= 8/20μs
Junction capacitance
1)
According to IEC61000-4-5.
C
J
V
R
= 0V, f = 1MHz
I/O to I/O
Will Semiconductor Ltd.
2
Revision 1.0, 2013/12/30
SPD9103W
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
110
100
90
80
70
60
50
40
30
20
10
0
Front time: T
1
= 1.25
×
T = 8µs
Time to half-value:
T
2
= 20µs
100
90
Peak pulse current (%)
T
2
Current (%)
10
0
5
T
T
1
10
15 20 25
Time (µs)
30
35
40
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
16
V
C
- Clamping voltage (V)
1.6
C
J
- Junction capacitance (pF)
Pulse waveform: t
p
= 8/20µs
14
12
10
8
6
4
0
5
10
15
I
PP
- Peak pulse current (A)
Clamping voltage vs. Peak pulse current
1.4
1.2
1.0
0.8
0.6
0.4
-3
-2
f = 1MHz
V
AC
= 50mV
20
-1
0
1
2
V
R
- Reverse voltage (V)
3
Capacitance vs. Reveres voltage
10
100
Peak pulse power (KW)
% of Rated power
1
80
60
40
20
0
0.1
0.01
1
10
100
Pulse time (µs)
1000
0
25
50
75
100
125
150
T
A
- Ambient temperature (
o
C)
Power derating vs. Ambient temperatur
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
3
Revision 1.0, 2013/12/30
SPD9103W
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
20
16
12
8
4
0
-4
-8
-12
-16
-20
-15
TLP current (A)
Z
0
= 50Ω
t
r
= 2ns
t
p
= 100ns
-10
-5
0
5
TLP voltage (V)
TLP Measurement
10
15
Will Semiconductor Ltd.
4
Revision 1.0, 2013/12/30
SPD9103W
Package outline dimensions
SOD-323
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions in millimeters
Min.
0.800
0.000
0.800
0.250
0.080
1.200
1.600
2.500
0.475 REF
0.250
0
°
0.400
8
°
Max.
1.000
0.100
0.900
0.350
0.150
1.400
1.800
2.700
Dimensions in Inches
Min.
0.031
0.000
0.031
0.010
0.003
0.047
0.063
0.098
0.019 REF
0.010
0
°
0.016
8
°
Max.
0.039
0.004
0.035
0.014
0.006
0.055
0.071
0.106
Recommend land pattern (Unit: mm)
Note: This land pattern is for your reference
only. Actual pad layouts may vary depending
on application.
Will Semiconductor Ltd.
5
Revision 1.0, 2013/12/30
电子工程世界
嵌入式系统
