SPN05T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN05T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN05T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
100V/2A,R
DS(ON)
= 320mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-252 package design
APPLICATIONS
High Frequency Small Power Switching for
MB/NB/VGA
Network DC/DC Power System
Load Switch
PIN CONFIGURATION
TO-252
PART MARKING
2011/12/09
Ver.1
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SPN05T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN05T10T252RGB
TO-252
※
SPN05T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
SPN05T10
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
R
θJA
Typical
100
±20
Unit
V
V
A
A
W
℃
℃
℃
/W
6
4.6
9
40
-55/150
-55/150
62
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SPN05T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V, I
D
=2A,
V
GEN
=10V, R
G
=3.3Ω
V
DS
=15V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=55℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=2A
V
GS
= 4.5V,I
D
=1A
V
DS
=5V,I
D
=2A
I
S
=1A,V
GS
=0V
100
1
2.0
2.5
±100
1
5
2.2
0.30
0.31
2.4
0.32
0.34
1.2
9
2
1.4
508
29
16.5
2
21.5
11.2
18.8
13
V
nA
uA
A
Ω
Ω
S
V
V
DS
=50V,V
GS
=10V
I
D
= 2A
nC
pF
nS
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SPN05T10
N-Channel Enhancement Mode MOSFET
TO-252 PACKAGE OUTLINE
2011/12/09
Ver.1
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SPN05T10
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2011/12/09
Ver.1
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电子工程世界
