SPN11T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN11T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN11T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
100V/8A, R
DS(ON)
= 120mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-252,TO-251 package design
APPLICATIONS
Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
2010/08/03
Ver.1
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SPN11T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN11T10T252RGB
TO-252
SPN11T10T251TGB
TO-251
※
SPN11T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
※
SPN11T10T251RGB : Tube ; Pb – Free ; Halogen - Free
SPN11T10
SPN11T10
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Avalanche Current
Power Dissipation @ T
A
=25℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
P
D
T
J
T
STG
R
θJA
Typical
100
±20
16
10.0
50
14
40
150
-55/150
110
Unit
V
V
A
A
A
W
℃
℃
℃
/W
2010/08/03
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SPN11T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,R
L
=5Ω
I
D
≡10A,V
GEN
=10V
R
G
=3.3Ω
V
DS
=25,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=125℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=8A
V
GS
= 4.5V,I
D
=3A
V
DS
=10V,I
D
=8A
I
S
=8A,V
GS
=0V
100
1
3
±100
25
250
11
120
200
7.3
1.3
13
2.2
6
450
65
50
5
17
15
4.4
720
21
V
nA
uA
A
mΩ
mΩ
S
V
V
DS
=80V,V
GS
=10V
I
D
= 10A
nC
pF
nS
2010/08/03
Ver.1
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SPN11T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/08/03
Ver.1
Page 4
SPN11T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/08/03
Ver.1
Page 5
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