SPN4392W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4392W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
30V/13A,R
DS(ON)
= 8mΩ@V
GS
=10V
30V/10A,R
DS(ON)
= 12mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
High-Side DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/06/03
Ver.1
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SPN4392W
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
ORDERING INFORMATION
Part Number
SPN4392WS8RGB
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Package
SOP- 8P
Part
Marking
SPN4392W
※
SPN4392WS8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
30
±20
Unit
V
V
A
A
A
W
℃
℃
℃/W
13
10
50
5.6
2.5
1.6
-55/150
-55/150
80
2011/06/03
Ver.1
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SPN4392W
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
= 0V , I
D
=250uA
V
GS(th)
V
DS
= V
GS
,I
DS
=250uA
I
GSS
I
DSS
R
DS(on)
gfs
V
SD
V
DS
= 0V,V
GS
= ±20 V
V
DS
= 30V,V
GS
=0V
V
DS
= 30V,V
GS
=0V,
T
J
= 125C
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
= 10A
V
DS
= 15V, I
D
=20 A
I
F
= 13 A,V
GS
= 0V
30
1.0
2.0
±100
1
100
0.006
0.009
10
1.0
1.5
0.008
0.012
V
nA
uA
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V,V
GS
= 5V,
I
D
=13 A
12
4
5
1500
320
200
8
20
nC
V
GS
= 0V, V
DS
= 25V,
F=1MHz
pF
12
15
30
9
ns
(V
DD
= 15 V,I
D
= 13 A,
V
GS
=10V,R
G
= 2.5Ω)
10
18
6
2011/06/03
Ver.1
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SPN4392W
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/06/03
Ver.1
Page 4
SPN4392W
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/06/03
Ver.1
Page 5
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