SPN4906
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4906 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
40V/6.0A,R
DS(ON)
= 45mΩ@V
GS
= 10V
40V/5.0A,R
DS(ON)
= 54mΩ@V
GS
= 4.5V
40V/4.5A,R
DS(ON)
= 83mΩ@V
GS
= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/07/20
Ver.1
Page 1
SPN4906
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
ORDERING INFORMATION
Part Number
SPN4906S8RGB
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Package
SOP- 8P
Part
Marking
SPN4906
※
SPN4906S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
40
±20
Unit
V
V
A
A
A
W
℃
℃
℃/W
6.0
5.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
2009/07/20
Ver.1
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SPN4906
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V,R
L
=15Ω
I
D
≡1.0A,V
GEN
=10V
R
G
=6Ω
V
DS
=0V,V
GS
=±12V
V
DS
=40V,V
GS
=0V
V
DS
=40V,V
GS
=0V
T
J
=85℃
V
DS
= 5V,V
GS
=4.5V
V
GS
= 10V,I
D
=6.0A
V
GS
=4.5V,I
D
=5.0A
V
GS
=2.5V,I
D
=4.5A
V
DS
=15V,I
D
=6.2A
I
S
=2.3A,V
GS
=0V
40
0.5
1.0
±100
1
5
10
0.040
0.047
0.075
13
0.8
16
3
2.5
15
6
10
40
20
12
20
80
0.045
0.054
0.083
1.2
24
V
nA
uA
A
Ω
S
V
V
DS
=15V,V
GS
=10V
I
D
= 2A
nC
nS
2009/07/20
Ver.1
Page 3
SPN4906
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/07/20
Ver.1
Page 4
SPN4906
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/07/20
Ver.1
Page 5
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