SPN7510
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7510 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
100V/30A,R
DS(ON)
= 16mΩ@V
GS
= 10V
100V/16A,R
DS(ON)
= 21mΩ@V
GS
= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
PART MARKING
2010/11/16
Ver.2
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SPN7510
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN7510T220TGB
Package
TO-220-3L
Part
Marking
SPN7510
※
SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
EAS
T
J
T
STG
R
θJA
Typical
100
±20
Unit
V
V
A
A
W
mJ
72
45
240
130
3.38
335
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.12mH , I
AS
= 75A , V
DD
= 80V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
-55/150
-55/150
2
℃
℃
℃/W
2010/11/16
Ver.2
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SPN7510
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,R
L
=1.6Ω
I
D
≡30A,V
GEN
=10V
R
G
=10Ω
V
DS
=25V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=100V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
= 150 °C
V
GS
= 10V,I
D
=30A
V
GS
= 4.5V,I
D
=16A
V
DS
=10V,I
D
=30A
I
S
=30A,V
GS
=0V
100
1.0
3.0
±100
10
100
16
21
52
1.3
69
12
39
5690
540
605
12
75
220
250
V
nA
uA
mΩ
S
V
V
DS
=80V,V
GS
=4.5V
I
D
= 30A
111
nC
9100
pF
nS
2010/11/16
Ver.2
Page 3
SPN7510
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/11/16
Ver.2
Page 4
SPN7510
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/11/16
Ver.2
Page 5
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