JIEJIE MICROELECTRONICS CO. , Ltd
SRV05‐4
TVS Diode Array
FEATURES:
300 Watts peak pulse power per line (t
P
=8/20µs)
Protects four I/O lines
Low clamping voltage
Low operating voltage
Low capacitance:1.6pF typical
ROHS compliant
Rev.2.0
SOT23‐6L
MAIN APPLICATIONS
USB power and data line protection
Digital video interface (DVI)
Notebook computers
Video graphics cards
Monitors and flat panel displays
10/100/1000 ethernet
SIM ports
ATM interfaces
PROTECTION SOLUTION TO MEET
IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Lightning) 15A (8/20µs)
PIN Configuration
MECHANICAL CHARACTERISTICS
JEDEC SOT23-6L package
Molding compound flammability rating : UL 94V-0
Quantity per reel : 3, 000pcs
Lead finish : lead free
Marking code：5UB
Circuit Diagram
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SRV05‐4
TVS Diode Array
JieJie Microelectronics CO. , Ltd
ABSOLUTE MAXIMUM RATINGS
(T
A
=25ºC, RH=45%-75%,
unless otherwise noted)
Parameter
Peak pulse power dissipation on 8/20
μs
waveform
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Lead soldering temperature
Operating junction temperature range
Storage temperature range
Symbol
P
PP
V
ESD
T
L
T
J
T
STG
Value
300
+/- 30
+/- 30
260 (10 sec.)
-55 to +125
-55 to +150
Unit
W
kV
℃
℃
℃
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
Parameter
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Forward voltage
Clamping voltage
（I/O
pin to Ground）
Junction capacitance
Symbol
V
RWM
V
BR
I
R
V
F
V
C
I
T
= 1mA
V
RWM
= 5V
pin5 to pin2
I
T
=10mA
I
PP
=15A, tp =8/20μs
V
RWM
= 0V, f = 1MHz
Any I/O pin to Ground
V
RWM
= 0V, f = 1MHz
Between I/O pins
1.2
22
3
pF
1.6
24.8
6.0
5
Conditions
Min
Typ
Max
5.0
Units
V
V
μA
V
V
C
J
RATINGS AND V‐I CHARACTERISTICS CURVES
(T
A
=25ºC,
unless otherwise noted)
FIG.1:V- I curve characteristics
(Uni-directional)
I
F
I
FIG.2: Pulse waveform
(8/20μs)
Percent of I
PPM
100
90
Peak value
front time: T1 = 1.25×T = 8×(1±20%)μs
time to half value: T2 = 20×(1±20%)μs
Half value
V
C
V
BR
V
RW M
V
I
R
V
F
I
T
50
T2
10
0
0
t(μs)
T
T1
10
20
30
40
I
PP
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SRV05‐4
TVS Diode Array
P
PP
derating in percentage(%)
100
80
60
40
20
0
0
T
A
(
℃
)
75
100
JieJie Microelectronics CO. , Ltd
FIG.3: Pulse derating curve
100
90
FIG.4: ESD clamping
(8KV contact)
Percent of I
PPM
30ns
60ns
25
50
125
150
175
10
0
0
t(ns)
tr 0.7 to 1ns
30
60
PACKAGE MECHANICAL DATA
Millimeter
Symbol
Min
A
A1
A2
B
C
D
e
E1
E
L1
L
X
Y
P
P1
P2
Land Pattern
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Inches
Min
0.035
0.000
0.017
0.010
0.003
0.110
0.032
0.060
Max
1.45
0.15
0.65
0.50
0.20
3.00
1.02
1.75
Max
0.057
0.006
0.026
0.020
0.007
0.122
0.043
0.069
0.90
0.00
0.45
0.35
0.08
2.80
0.69
1.50
2.80BSC
0.35
0.60
0.60
1.10
3.60
1.40
2.50
0.95
0.60
0.110BSC
0.013
0.024
0.024
0.024
0.043
0.141
0.055
0.098
0.037
P3
SRV05‐4
TVS Diode Array
JieJie Microelectronics CO. , Ltd
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the second version which is made in 15-Apr.-2017. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2017 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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