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SS110

直流反向耐压(Vr):100V 平均整流电流(Io):1A 正向压降(Vf):850mV @ 1A 100V,1A,VF=0.85V@1A

器件类别:分立半导体    肖特基二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件参数
参数名称
属性值
直流反向耐压(Vr)
100V
平均整流电流(Io)
1A
正向压降(Vf)
850mV @ 1A
文档预览
SS12 THRU SS1200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 1.0 Ampere
DO-214AC/SMA
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.067 (1.70)
0.051 (1.30)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.002
ounce, 0.07 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS12 SS13 SS14
SS15
SS16
MDD
SS16
SS18 SS110 SS1150 SS1200
MDD
MDD MDD
MDD
SS18 SS110 SS1150 SS1200
UNITS
MDD MDD MDD MDD
SS12 SS13 SS14 SS15
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
80
56
80
100
70
100
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
Amp
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
110
0.45
0.55
0.5
10.0
30.0
0.70
5.0
90
88.0
-50 to +125
-50 to +150
-50 to +150
0.85
0.2
2.0
0.95
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS12 THRU SS1200
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
24
0.6
18
0.4
12
0.2
SS12-SS16
SS18-SS1200
6
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
50
T
J
=25 C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10.0
10
TJ=100 C
1
1
TJ=75 C
0.1
0.1
SS12-SS14
SS15-SS16
SS18-SS1150
SS1200
0.01
TJ=25 C
0.001
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
400
200
T
J
=25 C
10
20
1
SS12-SS14
SS15-SS1200
2
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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