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SS16

直流反向耐压(Vr):60V 平均整流电流(Io):1A 正向压降(Vf):700mV @ 1A

器件类别:分立半导体    肖特基二极管   

厂商名称:合科泰(Hottech)

厂商官网:http://www.heketai.com

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器件:SS16

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器件参数
参数名称
属性值
直流反向耐压(Vr)
60V
平均整流电流(Io)
1A
正向压降(Vf)
700mV @ 1A
文档预览
Plastic-Encapsulate Diodes
SCHOTTKY DIODES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction, majority carrier conduction
7
4.50
52
SS12---SS1200
0
32
Built-in strain relief, ideal for automated placement
Low power loss, high efficiency.
High forward surge current capability
MECHANICAL DATA
SMA (DO-214AC) molded plastic body
leads solderable per MIL-STD-750, Method 2026
color band denotes cathode end
DO-214AC (SMA)
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS12 SS13 SS14
SS15
SS16
SS18 SS110 SS1150 SS1200
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
80
56
80
100
70
100
150
105
150
200
140
200
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
110
0.45
0.55
0.5
10.0
30.0
0.70
5.0
90
88.0
-50 to +125
-50 to +150
-50 to +150
0.85
0.2
2.0
0.95
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Diodes
SS12---SS1200
Typical Characteristics
FIG.1-FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
SS12-SS14
SS15-SS110
AVERAGE FORWARD RECTIFIED
CURRENT, A
1.0
PEAK FORWARD SURGE
CURRENT, A
0.8
0.6
0.4
0.2
0
0
25
32
24
16
8
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
Single phase, half wave 60Hz,
resistive or inductive load
50
75
100 125 150 175
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
AMBIENT TEMPERATURE, ( C)
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT, A
Tj=25
o
C
Fig.4- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MILLAMPERES
10
100
T
J
=100
o
C
10
T
J
=75 C
o
1
1.0
0
T
J
=25 C
0.01
0
o
0.1
SS12-SS14
SS15-SS16
SS18-SS110
20
40
60
80
100
0.01
0
0.2 0.4 0.6
0.8
1.0 1.2 1.4 1.6
PERCENT OF RATED PEAK REVERSE
VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE, V
Fig.5- TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE,pF
Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
Tj=25 C
100
SS12-SS14
SS15-SS110
200
TRANSIENT THERMAL
IMPEDANCE, C/W
10
20
1
2
0.1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE, V
PULSE DURATION, sec.
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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