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SS24F

直流反向耐压(Vr):40V 平均整流电流(Io):2A 正向压降(Vf):550mV @ 2A

器件类别:分立半导体    肖特基二极管   

厂商名称:合科泰(Hottech)

厂商官网:http://www.heketai.com

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器件参数
参数名称
属性值
直流反向耐压(Vr)
40V
平均整流电流(Io)
2A
正向压降(Vf)
550mV @ 2A
文档预览
SS22F-SS2200F
SCHOTTKY BARRIER RECTIFIER
FEATURES
For surface mounted applications
Metal silicon junction, majority carrier conduction
Built-in strain relief, ideal for automated placement
Low power loss, high efficiency.
High forward surge current capability
Plastic package has Underwriters Laboratory
SMAF
Flammability Classification 94V-0
10
MECHANICAL DATA
Cathode
Case: SMAF Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight:
27mg
(approx.)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or
inductive load.For capacitive load, derate current by 20%
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Half
Sine-wave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage at 2A
Maximum DC Reverse Current
Cat Rated DC Blocking
Voltage
@ T
A
=25°C
@ T
A
=100°C
Symbol
SS
22F
SS
23F
SS
24F
SS
25F
SS
26F
SS
28F
SS
210F
SS
2150F
SS
2200F
Unit
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
R
θJA
T
J
T
STG
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
2.0
50.0
80
56
80
100
70
100
150
105
150
200
140
200
0.55
0.5
10.0
220
0.70
0.85
0.95
0.2
V
mA
mA
pF
°C/w
°C
°C
5.0
180
75.0
-50 to +150
-50 to +150
2.0
Typical Junction Capacitance(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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SS22F-SS2200F
SCHOTTKY BARRIER RECTIFIER
Typical Characteristics
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
1.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
40
1.2
30
0.8
20
0.4
SS22F-SS26F
SS28F-SS2200F
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
50
T
J
=25 C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10.0
10
TJ=100 C
1
1
TJ=75 C
0.1
0.1
SS22F-SS24F
SS25F-SS26F
SS28F-SS2150F
SS2200F
0.01
TJ=25 C
0.001
0
20
40
60
80
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
2000
1000
T
J
=25 C
10
100
1
SS22F-SS24F
SS25F-SS2200F
10
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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SS22F-SS2200F
SCHOTTKY BARRIER RECTIFIER
SMAF Package Outline Dimensions
∠ALL
ROUND
∠ALL
ROUND
C
H
E
A
V M
A
E
D
A
g
g
pad
Top View
Bottom View
UNIT
mm
max
min
mil
max
min
A
1.1
0.9
43
35
C
0.20
0.12
7.9
4.7
D
3.7
3.3
146
130
E
2.7
2.4
106
94
e
1.6
1.3
63
51
g
1.2
0.8
47
31
pad
E
e
H
E
4.9
4.4
193
173
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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