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SS24G

直流反向耐压(Vr):40V 平均整流电流(Io):2A 正向压降(Vf):550mV @ 2A

器件类别:分立半导体    肖特基二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件参数
参数名称
属性值
直流反向耐压(Vr)
40V
平均整流电流(Io)
2A
正向压降(Vf)
550mV @ 2A
文档预览
SS22G THRU SS2200G
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
DO-214AC/SMA
Forward Current - 2.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.063
(1.60)
0.051 (1.30)
0.106(2.70)
0.090(2.30)
0.177(4.50)
0.173(4.40)
0.012(0.305)
0.006(0.152)
0.087(2.20)
0.075(1.90)
MECHANICAL DATA
0.012(0.31)MAX.
0.059(1.50)
0.035(0.90)
0.205(5.20)
0.185(4.70)
Dimensions
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.070
grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS22G SS23G SS24G SS25G SS26G
SS28G SS210G SS2150G SS2200G
UNITS
MDD
SS22G
MDD
MDD MDD
SS25G
MDD MDD
MDD
MDD
MDD
SS23G SS24G
SS26G SS28G SS210G SS2150G SS2200G
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
2.0
80
56
80
100
70
100
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
Amps
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
220
0.55
10.0
50.0
0.70
0.5
5.0
180
75.0
-50 to +125
-50 to +150
-50 to +150
0.85
0.95
0.2
2.0
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS22G THRU SS2200G
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
1.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
40
1.2
30
0.8
20
0.4
SS22-SS26
SS28-SS2200
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
50
T
J
=25 C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10.0
10
TJ=100 C
1
1
TJ=75 C
0.1
0.1
SS22-SS24
SS25-SS26
SS28-SS2150
SS2200
0.01
TJ=25 C
0.001
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
2000
1000
T
J
=25 C
10
100
1
SS22-SS24
SS25-SS2200
10
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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