SS8 550
TRANSISTOR(PNP)
FEATURES
High Collector Current
Complementary to SS8050
MARKING: Y2
SOT–23
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
300
417
150
-55½+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
-40
-25
-5
-100
-100
120
40
-0.5
-1.2
-1
100
20
V
V
V
MHz
pF
400
Typ
Max
Unit
V
V
V
nA
nA
I
C
=-100µA, I
E
=0
I
C
=-0.1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-10V,I
C
=-50mA , f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
L
120–200
H
200–350
J
300–400
１
SS8 550
Static Characteristic
-180
500
h
FE
——
I
C
Ta=100
℃
1mA
-160
(mA)
0.9mA
h
FE
-140
-120
-100
-80
-60
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
COLLECTOR CURRENT
DC CURRENT GAIN
Ta=25
℃
100
I
C
-40
-20
-0
-0.0
0.2mA
I
B
=0.1mA
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
10
-0.1
-1
-10
-100
V
CE
=-1V
-1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
-1000
-900
——
I
C
-1000
V
CEsat
——
I
C
-800
Ta=25
℃
-700
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-100
Ta=100
℃
Ta=25
℃
-10
-600
-500
Ta=100
℃
-400
-300
β=10
-200
-0.1
-1
-10
-100
-1000
-1
0.2
-1
-10
-100
β=10
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
-1000
——
I
C
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25 C
o
C
ib
(mA)
(pF)
-100
C
ob
Ta=100 C
-10
COLLCETOR CURRENT
-1
VCE=-1V
-0.1
-200
-300
-400
-500
-600
-700
-800
-900
-1000
1
-0.2
-1
-10
20
CAPACITANCE
Ta=25
℃
C
I
C
o
BASE-EMMITER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
500
fT
——
I
C
Pc
350
——
Ta
(MHz)
COLLECTOR POWER DISSIPATION
Pc (mW)
VCE-10V
o
Ta=25 C
-1
-10
-100
300
TRANSITION FREQUENCY
fT
250
100
200
150
100
50
10
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
２
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