JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
STD123S
TRANSISTOR (NPN)
SOT-23
FEATURES
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6Ω(Max.) (I
B
=1mA)
Marking:123
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. BASE
2. EMITTER
3. COLLECTOR
Value
20
15
6.5
1
350
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
On resistance
Symbol
V
(BR) CBO
V
(BR) CEO
V
(BR) EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Test conditions
I
C
=50
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
= 50
μ
A, I
C
=0
V
CB
= 20 V, I
E
=0
V
EB
= 6V, I
C
=0
V
CE
=1V, I
C
= 100mA
I
C
=500mA, I
B
= 50mA
V
CE
=5V,
I
C
=50mA
260
5
0.6
150
0.3
V
MHz
pF
Ω
Min
20
15
6.5
0.1
0.1
Typ
Max
Unit
V
V
V
μ
A
μ
A
f
T
C
ob
R
ON
V
CB
=10V, I
E
=0, f=1MHz
f=1KHz,I
B
=1mA,
V
IN
=0.3V
A,May,2011
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