SVD2N60T
2A, 600V N-Channel MOSFET
GENERAL DESCRIPTION
2
SVD2N60T is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary
S-
1
3
1.Gate 2.Drain 3.Source
Rin
TM
structure DMOS technology. The improved planar stripe cell
and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
12
3
TO-220-3L
FEATURES
∗
∗
∗
∗
∗
2A,600V,R
DS(on)(typ.)
=4.0Ω@V
GS
=10V
Low gate charge
Low C
rss
Fast switching
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD2N60T
Package
TO-220-3L
Marking
SVD2N60T
Shipping
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
E
AR
T
J
Tstg
-55
-55
Value
600
±30
2.0
8
44
0.22
120
5.4
+150
+150
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 1 of 6
SVD2N60T
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
JC
R
JA
Value
2.87
100
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2,3)
V
DS
=480V,I
D
=2.0A,
V
GS
=10V
(Note 2,3)
V
DD
=300V,I
D
=2.0A,
RG=25Ω
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=1.0A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
4.0
320
30
3
13
12
73
14.3
9.3
2.0
3.3
Max.
--
1.0
±100
4.0
4.6
380
45
5.6
30
60
ns
100
70
13
--
--
nC
pF
Unit
V
µA
nA
V
Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
L=56mH, I
AS
=2.0A,V
DD
=50V,R
G
=25Ω,starting T
J
=25°C;
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
=2.0A,V
GS
=0V
I
S
=2.0A,V
GS
=0V,
dI
F
/dt=100A/µS
Min.
--
--
--
--
--
Typ.
--
--
--
230
1.0
Max
.
2
8.0
1.4
--
--
A
V
ns
µC
Unit
2.
Pulse Test: Pulse width 300 s,Duty cycle 2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 2 of 6
SVD2N60T
NOMENCLATURE
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
Figure 2. Transfer Characteristics
100.00
10.00
4.5V
1.0
150
1.00
25
-55
0.10
Note:
1. 250 s Pulse Test
2. T
C
=25 C
Note:
1.V
GS
=40V
2. 250 s pulse test
0.1
1
10
0.01
0
2
4
6
8
10
V
DS
Drain-source voltage[V]
V
GS
Gate-Source Voltage [V]
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
10.0
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10.0
8.0
V
GS
=10V
V
GS
=20V
1.0
6.0
4.0
150
25
Note:
1.V
GS
=0V
2. 250 s pulse test
2.0
Note:T
J
=25 C
0.0
0.0
1.0
2.0
3.0
4.0
5.0
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
D
Drain Current [A]
V
SD
Source-Drain Voltage [V]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 3 of 6
Http://www.silan.com.cn
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
Capasistance [pF]
R
DS(ON)
(Normalized)
Drain-Source On-Resistance
V
GS
Gate-Source Voltage [V]
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.2
SVD2N60T
2009.07.09
Page 4 of 6
SVD2N60T
TYPICAL TEST CIRCUIT
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 5 of 6
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