SVF6N60MJ/F/D_Datasheet
6A 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF6N60MJ/F/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary
F-Cell
TM
structure
VDMOS
technology.
The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand
high
energy
pulse
in
the
avalanche
and
commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗
6A,600V,R
DS(on(typ)
=1.35Ω@V
GS
=10V
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF6N60MJ
SVF6N60F
SVF6N60D
SVF6N60DTR
Package
TO-251J-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF6N60MJ
SVF6N60F
SVF6N60D
SVF6N60D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 1 of 9
SVF6N60MJ/F/D_Datasheet
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
T
C
=25°C
T
C
=100°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J
T
stg
42
0.34
343
-55½+150
-55½+150
Ratings
SVF6N60F
600
±30
6
3.8
24
125
1.00
SVF6N60MJ/D
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Ratings
SVF6N60F
2.98
120
SVF6N60D
1.00
110
SVF6N60MJ
0.95
110
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
GS
=10V
(Note 2,3)
(Note 2,3)
V
DS
=480V,I
D
=6A,
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10V, I
D
=3A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
V
DD
=300V,I
D
=6A,
R
G
=25Ω
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
1.35
690.7
83.6
2.7
18.53
42.67
33.20
28.13
13.32
4.13
4.19
Max.
--
1.0
±100
4.0
1.5
--
--
--
--
--
--
--
--
--
--
nC
ns
pF
Unit
V
µA
nA
V
Ω
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 2 of 9
SVF6N60MJ/F/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
L=30mH, I
AS
=4.40A,V
DD
=105V, R
G
=25Ω, starting T
J
=25°C;
Pulse Test: Pulse width
≤300μs,Duty
cycle≤2%;
Essentially independent of operating temperature.
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
=6A,V
GS
=0V
I
S
=6A,V
GS
=0V,
dI
F
/dt=100A/µs(Note 2)
Min.
--
--
--
--
--
Typ.
--
--
--
190
0.53
Max.
6
24
1.4
--
--
A
V
ns
µC
Unit
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 3 of 9
SVF6N60MJ/F/D_Datasheet
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 4 of 9
SVF6N60MJ/F/D_Datasheet
TYPICAL CHARACTERISTICS(continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 5 of 9
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