LITE-ON
SEMICONDUCTOR
T1M5F800A and AR
TRIACs
1.0 AMPERES RMS
800 VOLTS
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TO-92
TO-92 (TO-226AA)
(TO-226AA)
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 800 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/us at
Tj=125
℃
)
High Surge Current of 10 Amps
Reverse pinning option (AR
type)
Pb-Free Package
DIM.
A
B
SEATING PLANE
TO-92
MIN.
4.45
4.32
3.18
1.15
2.42
12.7
2.04
2.93
3.43
MAX.
4.70
5.33
4.19
1.39
2.66
------
2.66
-----
-----
C
D
E
F
G
H
I
All Dimensions in millimeter
Pin
Description
T1M5F800A
Main terminal 1 (T1)
Gate (G)
Main terminal 2 (T2)
T1M5F800AR
Main terminal 2 (T2)
Gate (G)
Main terminal 1 (T1)
MECHANICAL DATA
Case: Molded plastic
Weight: 0.007 ounces, 0.2 grams
1
2
3
1
2
3
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Symbol
Value
Unit
Peak Repetitive Off– State Voltage (T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
800
Volts
On-State RMS Current, Full Cycle Sine Wave 50 to 60 Hz (T
C
= 80
℃
)
Peak Non-Repetitive Surge Current, Full Cycle Sine Wave 60 Hz (Tj =25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t
≦
2.0us ,Tc = 80
℃
)
Average Gate Power (Tc = 80
℃
, t
≦
8.3 ms )
Peak Gate Current ( t
≦
2.0us ,Tc = 80
℃
)
Peak Gate Voltage ( t
≦
2.0us ,Tc = 80
℃
)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
2
1.0
10
0.415
5.0
0.1
1.0
5.0
-40 to +125
-40 to +150
Amp
Amps
As
Watt
Watt
Amp
Volts
℃
℃
2
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 3, Sep-2007, KTXD17
RATING AND CHARACTERISTIC CURVES
T1M5F800A and AR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
RthJC
RthJA
Value
75
150
260
Unit
℃
/
W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
J
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(VD=Rated VDRM and VRRM; Gate Open)
T
j
=25
℃
T
j
=125
℃
I
DRM
I
RRM
----
----
----
----
10
100
uA
uA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM=
± 1.4A Peak @Tp
≦
2.0 ms, Duty Cycle
≦
2%)
V
TM
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
----
----
----
----
----
----
1.9
5.0
5.0
5.0
7.0
Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc; R
L
= 100 Ohms)
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA,
Gate Open)
I
H
V
GT1
V
GT2
V
GT3
V
GT4
I
L1
I
L2
I
L3
I
L4
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
10
2.0
2.0
2.0
2.5
15
20
15
15
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc; R
L
=100 Ohms)
Volts
Latching Current (V
D
=12V,I
G
= 10 mA)
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.67% Rated V
DRM
,Exponential Waveform,
Gate Open, T
J
=110
℃
)
dv/dt
20
----
----
V/us
RATING AND CHARACTERISTIC CURVES
T1M5F800A and AR
8
VGT, GATE TRIGGER VOLTAGE
IGT, GATE TRIGGER CURRENT
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-40 -20
0
20
40
60
80 100 120
Q3
Q2
Q1
Q4
7
6
5
4
Q3
3
2
1
0
-40 -20
Q2
Q1
0
20
40
60
80 100 120
TJ JUNCTION TEMPERATURE(
℃
)
Figure 1. Typical IGT versus TJ
TJ JUNCTION TEMPERATURE(
℃
)
Figure 2. Typical VGT versus TJ
3
2.5
2
1.5
Q1
3
2.5
IL, LATCHING CURRENT
IH, HOLDING CURRENT
2
1.5
Q3
Q1
1
0.5
0
-40 -20
Q3
1
0.5
0
-40 -20
0
20
40
60
80 100 120
0
20
40
60
80 100 120
TJ JUNCTION TEMPERATURE(
℃
)
Figure 3. Typical IH versus TJ
TJ JUNCTION TEMPERATURE(
℃
)
Figure 4. Typical IL versus TJ
P(AV) ,AVERAGE POWER DISSIPATION (WATTS)
IT(RMS) ,RMS ON STATE CURRENT (AMP)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
15
30
45
60
75
90
105 120 135
1.6
1.4
1.2
1
TJ=25
℃
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 6. Power Dissipation versus IT
TJ=125
℃
TC, CASE TEMPERATURE(
℃
)
Figure 5.On-state Current Derating Curve
RATING AND CHARACTERISTIC CURVES
T1M5F800A and AR
IT ,INSTANTANEOUS ON-STATE CURRENT (AMP)
10
TJ=25
℃
TJ=125
℃
1
-
0.1
0
1
2
3
4
VT ,INSTANTANEOUS ON-STATE VOLTAGE(VOLT)
Figure 7. On-State Characteristics
◎
Specifications mentioned in this publication are subject to change without notice.
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