首页 > 器件类别 > 分立半导体 > 整流桥

TB10S

反向峰值电压:1000V 平均整流电流(Io):800mA 正向压降(Vf):950mV @ 400mA

器件类别:分立半导体    整流桥   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

下载文档
器件参数
参数名称
属性值
反向峰值电压
1000V
平均整流电流(Io)
800mA
正向压降(Vf)
950mV @ 400mA
文档预览
TB2S THRU TB10S
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Voltage Range - 200 to 1000 Volts
Current - 0.8/1.0 Ampere
FEATURES
TBS
5.0± 0.15
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High temperature soldering guaranteed:
260
/10
seconds at 5 lbs., (2.3kg) tension
Small size, simple installation
High surge current capability
Glass passivated chip junction
4.4± 0.15
6.5± 0.2
1.3± 0.15
4.4± 0.15
MECHANICAL DATA
0.65± 0.05
4.0± 0.1
0.6± 0.1
0.1± 0.05
0.25± 0.05
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for capacitive load derate current by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
On glass-epoxy P.C.B.(Note1)
On aluminum substrate(Note2)
Peak forward surge current,
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per leg at 1A
Maximum DC reverse current
T
A
=25
at rated DC blocking voltage
T
A
=100
Typical thermal resistance(NOTE 3)
SYMBOLS
TB2S
200
140
200
TB4S
400
280
400
TB6S
600
420
600
0.8
1.0
30
TB8S
800
560
800
TB10S
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Amps
V
F
I
R
R
R
JL
JA
0.95
5
100
25
80
-55 to +150
-55 to +150
Volts
uA
uA
/W
Operating temperature range
storage temperature range
T
J
T
STG
NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads
2.On aluminum substrate P.C.B. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad
3.Thermal resistance form junction to ambient and junction to lead mounted on P.C.B. with 0.2X0.2''(5X5mm)
copper pads.
RATINGS AND CHARACTERISTIC CURVES TB2S THRU TB10S
FIG.1 TYPICAL FORWARD CHARACTERISTICS
Instantaneous Forward Current, (A)
1.0
FIG.2 FORWARD DERATING CURVE
1.0
Aluminum Substrate
0.4
Average Forward Rectified
Current, (A)
0.75
GLASS
EPOXY
P.C.B
0.1
0.5
0.25
RESISTIVE OR INDUCTIVE LOAD
0.01
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
0
25
50
75
100
125
150
Instantaneous Forward Voltage, ( V )
Ambient Temperature, (°C )
FIG.3 TYPICAL REVERSE CHARACTERISTICS
Instantaneous Reverse Leakage
Current, (
A
)
100000
FIG.4 PEAK FORWARD SURGE CURRENT
35
Peak
F
orward
Surge Current,
(A)
120
140
30
25
20
15
10
5
0
10000
1000
T
A
=100°C
100
T
A
=25°C
10
1.0
0
20
40
60
80
100
1
10
100
Percent Of Rated Peak Reverse Voltage, %
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
Number Of Cycles At 60Hz
查看更多>