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TB6S-08T/R7

Bridge Rectifier Diode, 1 Phase, 0.8A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TDI, MICRO DIP-4

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
DIP
包装说明
ROHS COMPLIANT, PLASTIC, TDI, MICRO DIP-4
针数
4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
600 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PDSO-G4
最大非重复峰值正向电流
20 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最大输出电流
0.8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
600 V
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
TB1S-08~TB10S-08
MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
100~1000 Volts
CURRENT
0.8 Ampers
Recongnized File #E139973
FEATURES
• Glass passivated chip junciton
• Ideally Suited for Automatic Assembly
0.264(6.70)
0.248(6.30)
0.179(4.55)
0.167(4.25)
0.028(0.7)
0.023(0.6)
• Save space on printed circuit boards
• Body Thick Very Thin <1.5mm
• Low Forward Voltage Drop
• Surge Overload Rating to 20A peak
• In compliance with EU RoHS 2002/95/EC directives
• Plastic Material:UL Flammability Classification Rating 94V-0
0.006(0.15)
0.002(0.05)
0.028(0.70)
0.058(1.45)
0.045(1.15)
+
0.162(4.10)
0.153(3.90)
0.203(5.15)
0.190(4.85)
0.012(0.30)
0.007(0.20)
MECHANICAL DATA
• Case : TDI, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Polarity: As Marked on case
• Marking: Type number
• Weight: 0.003 ounces, 0.090 grams (Approx.)
ABSOLUTE MAXIMUM RATINGS (If not specified T
A
=25
o
C)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current
SYMBOL
V
RRM
V
RMS
V
DC
I
O
CONDITIONS
-
-
-
60Hz sine wave,R-
load,T
A
=25
o
C On FR-4
P.C.B Board
60Hz sine wave,Non-
repetitive 1 cycle peak
value,T
J
=25
o
C
-
-
-
0.019(0.50)
-
TB1S-08
TB2S-08
TB4S-08
TB6S-08
TB8S-08
TB10S-08
UNIT
V
V
V
A
100
70
100
200
140
200
400
280
400
0.8
600
420
600
800
560
800
1000
700
1000
Peak Surge Forward Current
I
2
t Rating for fusing (t<8.3ms)
Operating Junction Temperature
Storage Temperature
I
FSM
I
2
t
T
J
T
STG
20
1.66
150
-55 to +150
A
A
2
S
o
C
C
o
October 28,2011-REV.02
PAGE . 1
TB1S-08~TB10S-08
ELECTRICAL CHARACTERISTICS (If not specified T =25
o
C)
A
PA RA M E TE R
F o r wa r d Vo lta g e
Re ve r s e C ur r e nt
Typ i c a l J unc ti o n c a p a c i ta nc e
S YMB OL
V
F
I
R
C
J
R
θJ
C
The r m a l Re s i s ta nc e
R
θJ
A
J unc ti o n to a m b i e nt, On F R- 4 P.C .B B o a r d
95
C OND ITIONS
I
F
=0 .8 A ,P uls e m e a s ur e me nt, Ra t i ng o f p e r d i o d e
A t V
RRM
,P uls e m e a s ur e me nt , Ra ti ng o f p e r d i o d e
V
R
= 4 V,f= 1 M H
Z
J unc ti o n to c a s e
MAX .
1
10
10
70
O
UNIT
V
μ
A
pF
C /W
RATING AND CHARACTERISTIC CURVES
100
I
F
, FORWARD CURRENT(A)
10
@ Fully Rated V
RRM
I
R
, Reverse Leakage
Current (µA)
1.4
1.6
1.8
2
10
150℃
1
25℃
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0.01
0
20
40
60
80
100
120
140
160
V
F
, FORWARD VOLTAGE(V)
Junction Temperature TJ, °C
FIG-2 TYPICAL LEAKAGE CURRENT vs
JUNCTION TEMPERATURE
Fig.1 -TYPICAL FORWARD CHARACTERISTICS
I
F
, FORWARD CURRENT (A)
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG 3- DERATING CURVE
October 28,2011-REV.02
PAGE . 2
TB1S-08~TB10S-08
MOUNTING PAD LAYOUT
MICRO DIP / TDI
0.157
(4.00)
Unit
inch(mm)
0.065
(1.65)
0.037
(0.95)
ORDER INFORMATION
• Packing information
T/R - 4K per 13" plastic Reel
T/R - 1K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
October 28,2011-REV.02
0.231
(5.87)
PAGE . 3
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