T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM31064
DESCRIPTION
The TDM31064 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 18.8mΩ @ VGS=4.5V
RDS(ON) < 14.0mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
TO‐220 Package
Application
PWM applications
Load switch
Power management
Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Diode Continuous Forward Current
Pulsed Drain Current
Drain Current @ Continuous
Maximum Power Dissipation
(t≤10s)
Drain Current @ Continuous
Maximum Power Dissipation
(t≤10s)
Thermal Resistance,Junction‐to‐Case
Thermal Resistance,Junction‐to‐Ambient
(Note 1)
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
I
S
（
T
C
=25
℃）
I
DM
（
T
C
=25
℃）
I
D
（
T
C
=25
℃）
I
D
（
T
C
=100
℃）
P
D(T
C
=25
℃
)
P
D(T
C
=100
℃
)
I
D
（
T
A
=25
℃）
I
D
（
T
A
=70
℃）
P
D(T
A
=25
℃
)
P
D(T
A
=70
℃
)
R
θJC
R
θJA(Steady State)
I
AS(L=0.5mH)
E
AS(L=0.5mH)
T
J
T
STG
Limit
100
+20
21
172
54
30
104
45
7.2
5.8
2
1.25
1.1
62.5
18
81
150
‐55 To 150
Unit
V
V
A
A
A
A
W
W
A
A
W
W
℃/W
℃/W
A
mJ
℃
℃
May 9, 2017
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
V
SD
V
GS
=0V,I
S
=2A
I
F
=20A, dI/dt=100A/μs
V
DS
=50V,I
D
=20A,V
GS
=10V
Condition
V
GS
=0V I
D
=250μA
V
DS
=80V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=VGS,I
D
=250μA
V
GS
=4.5V, I
D
=15A
V
GS
=10V, I
D
=20A
V
DS
=0V,V
GS
=0V, F=1.0MHz
V
DS
=30V,V
GS
=0V, F=1.0MHz
Min
100
‐
‐
1
‐
‐
‐
‐
‐
‐
V
DS
=30V, R
L
=30Ω, V
GEN
=10V,R
G
=6Ω
‐
I
D
=1A
‐
‐
‐
‐
‐
‐
‐
‐
‐
DATASHEET
TDM31064
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note3)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
0.8
1.3
V
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3. Guaranteed by design, not subject to production testing
Typ
‐
‐
‐
2
14
11.2
1.0
1440
405
30
16
7
38
41
28
4.8
5.8
45
86
Max
‐
1
±100
3
18.8
14.0
‐
1880
‐
‐
29
13
69
74
40
‐
‐
‐
‐
Unit
V
μA
nA
V
mΩ
mΩ
Ω
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
nS
nC
May 9, 2017
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM31064
Typical Operating Characteristics
May 9, 2017
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM31064
Typical Operating Characteristics (Cont.)
May 9, 2017
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM31064
Typical Operating Characteristics (Cont.)
May 9, 2017
Techcode Semiconductor Limited
www.techcodesemi.com
5
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