T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3426B
DESCRIPTION
The TDM3426B uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 10mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Diode Continuous Forward Current
Continuous Drain Current
(Note 1)
Pulse Drain Current Tested
Maximum Power Dissipation
Maximum Power Dissipation
Thermal Resistance,Junction‐to‐Ambient(t<10s)
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
Is(T
C
=25℃)
I
D
（T
C
=25℃）
I
DM
（T
A
=25℃）
P
D
(T
C
=25℃)
P
D
（T
A
=25℃）
P
D
（T
A
=70℃）
R
θJA
T
J
T
STG
Limit
30
+20
5
18
36
20
3.5
2.2
35
150
‐55 To 150
Unit
V
V
A
A
A
W
W
W
℃/W
℃
℃
NOTES:
1. Max continuous current is limited by bonding wire.
May 24, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Condition
V
GS
=0V I
D
=250μA
V
DS
=24V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=VGS,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=8A
Min
30
‐
‐
1.4
‐
‐
‐
‐
‐
V
DS
=15V, R
L
=15 Ω, V
GEN
=10V,
R
G
=6 Ω I
D
=1A
‐
‐
‐
‐
V
DS
=15V,I
D
=10A,V
GS
=10V
‐
‐
‐
I
DS
=10A, dI/dt=100A/μs
‐
‐
V
GS
=0V,I
S
=5A
‐
DATASHEET
TDM3426B
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
V
SD
0.8
1.1
V
NOTES:
2.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3.
Guaranteed by design, not subject to production testing
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
8.5
10
14
10.6
8
1.6
1.2
20.5
7.2
16
18
26
19
12
‐
‐
‐
‐
nS
nS
nS
nS
nC
nC
nC
Typ
‐
‐
‐
1.8
8.2
12.3
450
318
22
Max
‐
1
±10
2.5
10
16
600
‐
‐
Unit
V
μA
μA
V
mΩ
mΩ
PF
PF
PF
C
iss
C
oss
C
rss
V
DS
=15V,V
GS
=0V, F=1.0MHz
nS
nC
May 24, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3426B
Typical Operating Characteristics
May 24, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3426B
Typical Operating Characteristics(Cont.)
May 24, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3426B
Typical Operating Characteristics (Cont.)
May 24, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
5
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