T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3434
DESCRIPTION
The TDM3434 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 3.1mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous
Drain Current @ Current‐Pulsed
(Note 1)
Maximum Power Dissipation
Drain Current @ Continuous
Maximum Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
I
D
（T
C
=25℃）
I
D
（T
C
=100℃）
I
DM
（T
C
=25℃）
P
D
(T
C
=25℃)
P
D
(T
C
=100℃)
I
D
（T
A
=25℃）
I
D
（T
A
=70℃）
P
D
(T
A
=25℃)
P
D
(T
A
=70℃)
T
J
T
STG
Limit
40
+20
100
78
300
100
50
25
20
2.72
1.9
150
‐55 To 150
Unit
V
V
A
A
A
W
W
A
A
W
W
℃
℃
October 15, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
Thermal Resistance,Junction‐to‐Ambient
(Note 1)
Thermal Resistance,Junction‐to‐Case
R
θJA
(t≤10s)
R
θJA
(Steady State)
R
θJC
(Steady State)
18
55
1.5
DATASHEET
TDM3434
℃/W
℃/W
℃/W
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
V
GS(th)
R
DS(ON)
V
DS
=VGS,I
D
=250μA
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=25A
DYNAMIC CHARACTERISTICS
(Note4)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
V
SD
V
GS
=0V,I
S
=20A
‐
0.8
1.1
V
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3. Guaranteed by design, not subject to production testing
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
I
F
=5A, dI/dt=100A/μs
V
DS
=20V,I
D
=25A,V
GS
=4.5V
V
DS
=20V, R
L
=20Ω, V
GEN
=10V,R
G
=6Ω
‐
I
D
=1A
‐
‐
‐
‐
‐
‐
‐
‐
17
11.5
36
31
17
7
5.3
38
35
‐
‐
‐
‐
‐
‐
‐
‐
‐
nS
nS
nS
nS
nC
nC
nC
Symbol
BV
DSS
I
DSS
I
GSS
Condition
V
GS
=0V I
D
=250μA
V
DS
=32V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
Min
40
‐
‐
1.4
‐
‐
T
J
=100°C
Typ
‐
‐
‐
1.7
3.2
2.7
3.3
0.88
2650
750
88
Max
‐
1
±100
2.5
4.2
3.1
‐
‐
‐
‐
‐
Unit
V
μA
nA
V
mΩ
mΩ
mΩ
Ω
PF
PF
PF
‐
‐
‐
‐
‐
R
G
C
iss
C
oss
C
rss
V
DS
=0V,V
GS
=0V, F=1.0MHz
V
DS
=20V,V
GS
=0V, F=1.0MHz
nS
nC
October 15, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3434
Typical Operating Characteristics
October 15, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3434
Typical Operating Characteristics(Cont.)
October 15, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3434
Typical Operating Characteristics (Cont.)
October 15, 2015
Techcode Semiconductor Limited
www.techcodesemi.com
5
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