T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3444
DESCRIPTION
The TDM3444 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM
applications.
GENERAL FEATURES
RDS(ON) < 4.9mΩ @ VGS=4.5V
RDS(ON) < 3.8mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
TO220 Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous
Drain Current @ Current‐Pulsed
(Note 1)
Drain Current @ Continuous
Maximum Power Dissipation (T
A
=25℃)
Maximum Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient
(Note 1)
Symbol
V
DS
V
GS
I
D
（T
A
=25℃）
I
D
（T
A
=70℃）
I
DM
（T
C
=25℃）
I
D
（T
C
=25℃）
I
D
（T
C
=100℃）
P
D
T
J
T
STG
R
θJA
Limit
40
+20
25
20
300
100
78
2.7
150
‐55 To 150
50
Unit
V
V
A
A
A
A
A
W
℃
℃
℃/W
October 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
1
T
echcode
®
N-Channel Enhancement Mode MOSFET
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Condition
V
GS
=0V I
D
=250μA
V
DS
=32V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=VGS,I
D
=250μA
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=25A
Min
40
‐
‐
1.4
‐
‐
‐
‐
‐
V
DS
=20V, R
L
=20Ω, V
GEN
=10V,R
G
=6Ω
‐
I
D
=1A
‐
‐
‐
V
DS
=20V,I
D
=25A,V
GS
=4.5V
‐
‐
‐
I
F
=5A, dI/dt=100A/μs
‐
‐
V
GS
=0V,I
S
=20A
‐
DATASHEET
TDM3444
ELECTRICAL CHARACTERISTICS
(T
A
=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Drain‐Source On‐State Resistance
DYNAMIC CHARACTERISTICS
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
(Note 2)
V
SD
0.8
1.1
V
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
3. Guaranteed by design, not subject to production testing
Typ
‐
‐
‐
1.7
3.1
2.5
2650
750
88
17
11.5
36
31
17
7
5.3
38
35
Max
‐
1
±100
2.5
4.9
3.8
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
Unit
V
μA
nA
V
mΩ
mΩ
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
V
DS
=20V,V
GS
=0V, F=1.0MHz
nS
nC
October 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
2
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3444
Typical Operating Characteristics
October 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
3
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3444
Typical Operating Characteristics(Cont.)
October 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
4
T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3444
Typical Operating Characteristics (Cont.)
October 15, 2016
Techcode Semiconductor Limited
www.techcodesemi.com
5
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