JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP111
DARLINGTON TRANSISTOR (NPN)
TO-220-3L
FEATURES
High DC Current Gain : h
FE
=1000 @ V
CE
=4V, I
C
=1A(Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS
(T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
80
80
5
2
2
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter sustaining
voltage
Symbol
V
(BR)CBO
V
CEO
(sus)
Test
conditions
Min
80
80
5
Typ
Max
Unit
V
V
V
I
C
=10mA,I
E
=0
I
C
=30mA,I
B
=0
I
E
=10mA,I
C
=0
V
CE
=40V,I
B
=0
V
CB
=80V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=4V,I
C
=1A
V
CE
=4V,I
C
=2A
I
C
=2A,I
B
=8mA
V
CE
=4V,I
C
=2A
V
CB
=10V,I
E
=0,f=0.1MHz
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CEO
I
CBO
I
EBO
h
FE(1)
2
1
2
1000
500
2.5
2.8
100
mA
mA
mA
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
V
CE(sat)
V
BE
C
ob
V
V
pF
A,Mar,2011
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