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TP5531U-CR

增益带宽积(GBP):350kHz 放大器组数:1 运放类型:Zero-Drift 各通道功耗:34uA 压摆率(SR):0.16 V/us 电源电压:1.8V ~ 5.5V

器件类别:模拟混合信号IC    通用运放   

厂商名称:思瑞浦微电子科技(3PEAK INCORPORATED)

厂商官网:http://www.3peakic.com.cn

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器件参数
参数名称
属性值
增益带宽积(GBP)
350kHz
放大器组数
1
输出类型
Rail-to-Rail
运放类型
Zero-Drift
各通道功耗
34uA
压摆率(SR)
0.16 V/us
工作温度
-40°C ~ 125°C
电源电压
1.8V ~ 5.5V
文档预览
TP5531
 
/
 
TP5532
 
/
 
TP5534
 
 
1.8V, 34μA, RRIO, Zero Drift Op-amps
Description
The 3PEAK TP5531/2/4 low-power chopper stabilized
operational amplifiers provide input offset voltage
correction for very low offset and offset drift over time
and temperature. The devices operate with a single
supply voltage as low as 1.8V, while drawing 34μA per
amplifier of quiescent current with a gain bandwidth
product of 350kHz. They are unity gain stable, have no
1/f noise, have good Power Supply Rejection Ratio
(PSRR) and Common Mode Rejection Ratio (CMRR),
and feature rail-to-rail input and output swing.
The devices were designed using an advanced CMOS
process. The TP5531 (single version) is available in
SC70-5, SOT23-5 and SO-8 packages. The TP5532
(dual version) is offered in MSOP-8 and SO-8 package.
The TP5534 (quad version) is available in TSSOP-14
and SOIC-14 package. All versions are specified for
operation from -40°C to 125°C.
Features
LOW OFFSET VOLTAGE: 10
μV
(Max)
ZERO DRIFT: 0.008 µV/°C
0.1Hz to 10Hz Noise: 1.1 µV
PP
Low Supply Current: 34µA per Amplifier
Bandwidth: 350 kHz
Slew Rate: 0.16 V/μs
High Gain, 130 dB High CMRR and PSRR
Rail-to-rail Input and Output Swing
–40°C to 125°C Operation Range
Small Packages: SC70 and SOT23 (TP5531)
Applications
Transducer Amplifier
Bidirectional Current Sense
DC Offset Correction
Temperature Measurement
Remote Located Sensors
Battery-Powered Instruments
Electronic Weigh Scales
3PEAK and the 3PEAK logo are registered trademarks of
3PEAK INCORPORATED. All other trademarks are the property of
their respective owners.
Related Zero-Drift Op-amps
V
OS
(Max.)
GBWP
Supply Current
e
N
at 1 kHz
Single
Dual
Quad
10
μV
350 kHz
34
μA
55 nV/√Hz
TP5531
TP5532
TP5534
5
μV
1.5 MHz
220
μA
25 nV/√Hz
TP5541
TP5542
TP5544
5
μV
3.5 MHz
500
μA
15 nV/√Hz
TP5551
TP5552
TP5554
Pin Configuration
(Top View)
0.1Hz to 10Hz NOISE
500nV/div
            
5s/div
 
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REV1.0
1
 
TP5531 / TP5532/TP5534
1.8V, 34μA, RRIO, Zero Drift Op-amps
 
Pin Configuration
(Top View, continued) 
TP5531
8-Pin SOIC
(-S Suffix)
NC
﹣In
﹢In
﹣Vs
1
2
3
4
8
7
6
5
NC
﹢Vs
Out
NC
Out A
﹣In
A
﹢In
A
﹣Vs
1
2
3
4
A
B
TP5532
8-Pin SOIC/MSOP
(-S and -V Suffixes)
8
7
6
5
﹢Vs
Out B
﹣In
B
﹢In
B
Out A
﹣In
A
﹢In
A
﹢Vs
﹢In
B
﹣In
B
Out B
1
2
A
TP5534
14-Pin SOIC/TSSOP
(-S and -T Suffixes)
14
13
D
Out D
﹣In
D
﹢In
D
﹣Vs
﹢In
C
﹣In
C
Out C
3
4
5
B
C
12
11
10
9
8
6
7
 
Order Information
Model Name
Order Number
TP5531-TR
TP5531
TP5531-CR
TP5531-SR
TP5531U
TP5532
TP5534
TP5531U-TR
TP5531U-CR
TP5532-SR
TP5532-VR
TP5534-SR
TP5534-TR
Package
SOT23-5
SC70-5 (SOT353)
SOIC-8
SOT23-5
SC70-5
SOIC-8
MSOP-8
SOIC-14
TSSOP-14
Transport Media, Quantity
Tape and Reel, 3,000
Tape and Reel, 3,000
Tape and Reel, 4,000
Tape and Reel, 3,000
Tape and Reel, 3,000
Tape and Reel, 4,000
Tape and Reel, 3,000
Tape and Reel, 2,500
Tape and Reel, 3,000
Marking
Information
E31T
E31C
E31S
E31U
E31V
E32S
E32V
E34S
E34T
Absolute Maximum Ratings
Note 1
Supply Voltage: .....................................................6V
Input Voltage: ....................... ……V
– 0.2 to V
+
+ 0.2
Input Current: +IN, –IN
Note 2
Current at Supply Pins……………............... ±50mA
Operating Temperature Range.......–40°C to 125°C
Maximum Junction Temperature................... 150°C
Storage Temperature Range.......... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ......... 260°C
........................... ±20mA
Output Current: OUT...................................... ±60mA
Output Short-Circuit Duration
Note 3
…....... Indefinite
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to
any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2:
The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 500mV beyond the
power supply, the input current should be limited to less than 10mA.
Note 3:
A heat sink may be required to keep the junction temperature below the absolute maximum. This depends on the power
supply voltage and how many amplifiers are shorted. Thermal resistance varies with the amount of PC board metal connected to
the package. The specified values are for short traces connected to the leads.
2
 
REV1.0
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TP5531 / TP5532/TP5534
1.8V, 34μA, RRIO, Zero Drift Op-amps
ESD, Electrostatic Discharge Protection
Symbol
HBM
CDM
Parameter
Human Body Model ESD
Charged Device Model ESD
Condition
MIL-STD-883H Method 3015.8
JEDEC-EIA/JESD22-C101E
Minimum Level
7
2
Unit
kV
kV
Electrical Characteristics
The boldface denotes the specifications which apply over the full operating temperature range, T
A
= -40°C to +125°C.
At T
A
= 27°C, V
DD
= 5V, R
L
= 10kΩ, V
CM
= V
DD
/2, unless otherwise noted.
SYMBOL
V
DD
I
Q
V
OS
dV
OS
/dT
PSRR
V
n
e
n
C
IN
I
B
I
OS
V
CM
CMRR
V
O
I
SC
C
L
GBWP
SR
t
OR
t
S
A
VOL
PARAMETER
Supply Voltage Range
Quiescent current per amplifier
Over temperature
Input Offset Voltage
vs temperature
vs power supply
input voltage noise, f=0.01Hz to 1Hz
input voltage noise, f=0.1Hz to 10Hz
Input voltage noise density, f=1kHz
Input capacitor, Differential
Input capacitor, Common-Mode
Input Bias Current
Over temperature
Input offset current
Common-mode voltage range
Common-mode rejection ratio
Output Voltage Swing from rail
Over temperature
Short-circuit current
Maximum Capacitive Load
Unity Gain Bandwidth
Slew rate
Overload recovery time
Settling time to 0.01%
Open-Loop Voltage Gain
CONDITIONS
I
O
= 0
Input grounded, unity gain.
Vs = +1.8V to +5.5V
MIN
1.8
TYP
34
2
0.008
0.5
0.4
1.1
55
3
2
±50
±100
MAX
5.5
40
55
10
0.05
UNITS
V
μA
μA
μV
μV/°C
μV/V
μV
pp
μV
pp
nV/√Hz
pF
pF
pA
pA
pA
V
dB
mV
mV
mA
pF
kHz
V/μs
μs
μs
dB
(V-)–0.1
110
R
L
=10kΩ
R
L
=10kΩ
±200
800
±400
(V
+
)+0.1
10
10
±60
130
5
θ
JA
Thermal Resistance Junction to
Ambient
C
L
=100pF
G=+1, CL=100pF
G=-10
C
L
=100pF
(V-)+100mV<V
O
<(V+)-100mV,
R
L
= 100kΩ
SC70-5 (SOT353)
SOT23-5
MSOP-8
SOIC-8
SOIC-14
TSSOP-14
1,000
350
0.16
60
40
100
120
250
200
210
158
83
100
°C/W
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REV1.0
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TP5531 / TP5532/TP5534
1.8V, 34μA, RRIO, Zero Drift Op-amps
 
Typical Performance Characteristics
Offset Voltage Distribution
18
16
14
Population (%)
12
10
8
6
4
2
0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Offset Voltage (μV)
Vos(μV)
10
8
6
4
2
0
-2
-4
-6
-8
-10
-50
-25
0
25
50
75
100
125
Offset Voltage vs TEMPERATURE
Temperature(°
C)
OPEN-LOOP GAIN vs FRENQUENCY
120
100
80
60
A
OL
(dB)
CMRR vs FREQUENCY
140
90
Phase(deg)
140
120
100
CMRR(dB)
40
20
0
-20
-40
-60
1
100
10k
Frequency(Hz)
1M
80
60
40
20
40
-10
-60
0
1
10
100
1k
10k
100k
1M
Frequency(Hz)
 
 
 
PSRR vs FREQUENCY
140
120
100
PSRR(dB)
OUTPUT SWING vs LOAD CURRENT
3
+PSRR
Output Swing(V)
2
1
0
-1
-2
-3
25
°
C
125
°
C
125 C
25 C
0
V = ±2.5V
80
60
40
20
0
1
-PSRR
-40
C
10
100
1k
10k
100k
1M
5 10 15 20 25 30 35 40 45 50 55 60
Output current(mA)
Frequency(Hz)
4
 
REV1.0
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TP5531 / TP5532/TP5534
1.8V, 34μA, RRIO, Zero Drift Op-amps
Typical Performance Characteristics
(continue)
IB vs COMMON-MODE VOLTAGE
100
80
60
40
I
B
(pA)
INPUT BIAS vs TEMPERATURE
10000
0
-20
-40
-60
-80
-100
0
1
2
3
4
5
Common-Mode Voltage(V)
I
B
(pV)
20
1000
100
10
-50
-25
0
25
50
75
100
125
Temperature(°
C)
Vosvs COMMON-MODE VOLTAGE
2
1.5
1
Vos(μV)
45
40
35
30
QUIESCENT CURRENT vs TEMPERATURE
0.5
0
-0.5
-1
-1.5
-2
0
1
2
3
4
5
Common-Mode Voltage(V)
I
Q
(μV)
25
20
15
10
5
0
‐50
‐25
0
25
50
75
100
125
150
Temperature(°C)
 
Quiescent Current Distribution
160
140
POPULATION
120
100
80
60
40
20
0
28.25
29.75
31.25
32.75
34.25
35.75
37.25
38.75
40.25
41.75
43.25
44.75
29
32
35
38
41
27.5
30.5
33.5
36.5
39.5
42.5
44
Iq (μA)
        
 
REV1.0
Typical Performance Characteristics
(continue)
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