JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
TPA2030NND03
TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
C
DESCRIPTION
PNP Epitaxial planar Silicon Transistor
FEATURES
Collector current is large.
Collector saturation voltage is low.
V
CE
(sat)
≤-250mA
At I
C
=−200mA / I
B
=
−10mA
APPLICATION
For switching, for muting.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: BW
C
TOP
B
C
1. BASE
2. EMITTER
3. COLLECTOR
E
C
BACK
E
B
BW
B E
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-15
-12
-6
-0.5
0.15
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
= -10μA, I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -10μA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
=-2V, I
C
= -10mA
I
C
= -200mA, I
B
= -10mA
V
CE
=-2V, I
C
= -10mA,
f=100MHz
V
CB
=-10V, I
E
=0,f=1MHz
260
6.5
270
Min
-15
-12
-6
-0.1
-0.1
680
-0.25
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
A,May,2011
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