JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TPC2715NND03
TRANSISTOR
DESCRIPTION
NPN
Epitaxial planar Silicon Transistor
TOP
B
1. BASE
E
C
FEATURES
High power gain: G
pe
=27dB(f=10.7MHz)
Recommended for FM IF,OSC Stage and AM CONV.IF Stage
APPLICATION
High Frequency amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: RR,RO,RY
C
2. EMITTER
3. COLLECTOR
C
BACK
E
B
RR
B
E
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
35
30
4
50
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector- Base time constant
Power Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Cc.rbb’
G
p
Test conditions
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHZ
V
CE
=10V, I
C
=1mA, f=30MHZ
V
CE
=6V, I
C
=1mA, f=10.7MHZ
27
100
40
Min
35
30
4
0.1
0.1
240
0.4
1
400
3.2
50
33
V
V
MHz
pF
ps
dB
Typ
Max
Unit
V
V
V
μA
μA
A,May,2011
CLASSIFICATION OF h
FE
Rank
Range
Marking
R
40-80
RR
O
70-140
RO
Y
120-240
RY
A,May,2011
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