JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
TSA143TNND03
DESCRIPTION
PNP Digital Transistor
FEATURES
1) Built-in bias resistors enable the configuration of an
inverter circuit
without connecting external input
resistors (see equivalent circuit)
2) The bias resistors consist of thin-film resistors with
to allow
positive
biasing of the
input. They also have the advantage of
almost
completely eliminating parasitic effects
3) Only the on/off conditions need to be set for operation,
making device design easy
APPLICATION
PNP Digital Transistor
For portable equipment:(i.e.
Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note
book PC, etc.)
MARKING: 93
O
equivalent circuit
O
TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
I
G
O
BACK
G
I
1. IN
2. GND
3. OUT
93
I
G
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base
Voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
j
T
stg
Value
-50
-50
-5
-100
150
150
-55~150
Units
V
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
3.29
4.7
250
Min
-50
-50
-5
-0.5
-0.5
-0.3
600
6.11
KΩ
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
Typ
Max
Unit
V
V
V
μA
μA
V
Conditions
I
C
=-50μA
I
C
=-1mA
I
E
=-50μA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA,I
B
=-0.25mA
V
CE
=-5V,I
C
=-1mA
A,Jun,2011
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