May, 2018
SJ-FET
TSF65R190S2/TSP65R190S2
650V N-Channel Super-Junction MOSFET Gen-Ⅱ
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Multi-Epi process SJ-FET
700V
@TJ = 150 ℃
Typ. RDS(on) = 0.16Ω
Ultra Low Gate Charge (typ. Qg
= 36.5nC)
• 100% avalanche tested
•
•
•
•
TSF65R190S2/TSP65R190S2
650V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Features
TSF65R190S2
TSP65R190S2
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AS
dv/dt
dVds/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Peak Diode Recovery dv/dt
(Note 3)
Drain Source voltage slope (Vds=480V)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/16” from Case for 10 Seconds
TSP65R190S2
650
20*
12.6*
65
±30
485
3.5
15
50
150
-55 to +150
260
TSF65R190S2
Unit
V
A
A
V
mJ
A
V/ns
V/ns
34
W
℃
℃
* Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP65R190S2
0.83
0.5
62
TSF65R190S2
3.7
-
80
Unit
℃/W
℃/W
℃/W
©2018 Truesemi Semiconductor Corporation
TSF65R190S2/TSP65R190S2
Rev. 1.0
www.Truesemi.com
Electrical Characteristics TC = 25℃
unless otherwise noted
TSF65R190S2/TSP65R190S2
650V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Symbol
Parameter
Conditions
V
GS
= 0V, I
D
= 250µA, T
J
=
25℃
V
GS
= 0V, I
D
= 250µA, T
J
=
150℃
I
D
= 250µA, Referenced to
25℃
V
DS
= 600V, V
GS
= 0V
-T
C
= 125℃
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
Min
650
Typ
-
Max
-
Unit
V
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
-
-
700
0.6
-
-
-
-
3.0
0.16
1805
68
2.1
36.5
8.7
12.5
9.8
38
39
170
47
-
-
0.9
318
5.5
24.9
-
-
1
100
100
-100
4.0
0.19
-
-
-
-
-
-
-
-
-
-
-
20
65
1.4
-
-
-
V
V/℃
µA
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
A
A
V
ns
µC
A
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Rg
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate resistance
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
On Characteristics
Dynamic Characteristics
V
DS
= 100V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 480V, I
D
= 10A,
V
GS
= 10V
(Note 4)
f=1 MHz, open drain
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DS
= 400V, I
D
= 10A
t
r
Turn-On Rise Time
R
G
= 3.3Ω, V
GS
= 10V
t
d(off)
Turn-Off Delay Time
(Note 4)
t
f
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Irrm
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 20A
Reverse Recovery Time
V
GS
= 0V, V
DS
= 400V,
Reverse Recovery Charge
I
S
= 10A, dI
F
/dt =100A/µs
Peak Reverse Recovery Current
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. ID=I
AS
, VDD=50V, Starting TJ=25 ℃
3. I
SD
≤ID, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25 ℃
4. Essentially Independent of Operating Temperature Typical Characteristics
©2018 Truesemi Semiconductor Corporation
TSF65R190S2/TSP65R190S2
Rev. 1.0
www.Truesemi.com
Typical Performance Characteristics
TSF65R190S2/TSP65R190S2
650V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Safe operating area TC=25
℃
parameter: tp;
TO-220
100
1uS
Safe operating area TC=25
℃
parameter: tp;
TO-220FullPAK
100
1uS
10uS
10uS
100uS
10
100uS
1mS
10mS
10
1mS
I
D
[A]
I
D
[A]
10mS
DC
1
DC
1
0.1
0.1
1
10
100
1000
0.01
1
10
V
DS
[V]
V
DS
[V]
100
1000
Typ. output characteristics
T
j
=25
℃
parameter: V
GS
Typ. transfer characteristics
©2018 Truesemi Semiconductor Corporation
TSF65R190S2/TSP65R190S2
Rev. 1.0
www.Truesemi.com
Typical Performance Characteristics
TSF65R190S2/TSP65R190S2
650V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Typ. drain-source on-state resistance
parameter：V
GS
0.3
10
9
8
0.25
7
5V
Typ. gate charge characteristics
Ron[ohm]
6
Vgs[V]
10V
0.2
7V
5
4
3
0.15
2
1
0.1
0
0
5
10
15
ID[A]
20
25
30
0
10
20
Qgate[nC]
30
40
Typ. capacitances
10000
Normalized
V
GS(th)
characteristics
Ciss
1000
C[pF]
100
Coss
10
Crss
1
0
100
200
300
400
ID[A]
©2018 Truesemi Semiconductor Corporation
TSF65R190S2/TSP65R190S2
Rev. 1.0
www.Truesemi.com
Typical Performance Characteristics
TSF65R190S2/TSP65R190S2
650V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Normalized on resistance vs temperature
Forward characteristics of reverse diode
10
Drain-source breakdown voltage
160
140
120
100
PD[W]
80
60
40
20
0
0
25
Power dissipation
Non
FullPAK
FullPAK
50
75
Tc[℃]
100
125
150
©2018 Truesemi Semiconductor Corporation
TSF65R190S2/TSP65R190S2
Rev. 1.0
www.Truesemi.com
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