TSF65R360S2
650V 15A N-Channel SJ-MOSFET
TSF65R360S2
650V 15A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150
℃
• Typ. RDS(on) = 0.34Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
(Note 3)
Value
650
13*
9.1*
42*
±30
205
2.4
0.43
15
32
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Value
3.9
--
80
Unit
℃/W
℃/W
℃/W
© 2018 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
Electrical Characteristics TC = 25℃
unless otherwise noted
TSF65R360S2
650V 15A N-Channel SJ-MOSFET
Symbol
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0V, I
D
= 250µA,
T
J
= 25℃
V
GS
= 0V, I
D
= 250µA,
T
J
= 150℃
I
D
= 250µA, Referenced to
25℃
V
DS
= 650V, V
GS
= 0V
- T
J
= 150℃
650
--
--
--
--
700
0.6
--
10
--
--
--
1
--
V
V
V/℃
µA
µA
Parameter
Conditions
Min
Typ
Max
Unit
ΔBV
DSS
/ Δ
TJ
I
DSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate-Body Leakage Current,
V
GS
= 30V, V
DS
= 0V
Forward
Gate-Body Leakage Current,
V
GS
= -30V, V
DS
= 0V
Reverse
--
--
--
--
100
-100
nA
nA
Gate Threshold Voltage
Static Drain-Source On-
Resistance
Forward Trans conductance
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
=
6.5A
V
DS
=
10V,
I
D
= 7.0A (Note 4)
f=1MHz,open drain
2.5
--
--
--
0.34
12
4.5
0.38
-
V
Ω
S
R
g
Dynamic Characteristics
C
iss
C
oss
C
rss
Gate resistance
--
3.5
--
Ω
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
1000
340
--
--
10
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 400V, I
D
= 7.5A
R
G
= 20Ω(Note 4, 5)
--
--
--
--
--
--
--
13
11
100
12
43
5
22
-
-
-
-
--
-
-
ns
ns
ns
ns
nC
nC
nC
V
DS
= 480V, I
D
= 7.5A
V
GS
= 10V (Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
=2.4A, V
DD
=50V, Starting TJ=25
℃
3. I
SD
≤15A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25
℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2018 Truesemi Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward
Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
V
GS
= 0V, I
F
= 7.5A
Voltage
V
GS
= 0V, I
F
= 7.5A
Reverse Recovery Time
di
F
/dt =100A/µs (Note 4)
Reverse Recovery Charge
--
--
--
--
--
-
-
0.9
345
4.5
15
40
1.5
-
-
A
A
V
ns
µC
2
Ver.B1
www.truesemi.com
Typical Performance Characteristics
TSF65R360S2
650V 15A N-Channel SJ-MOSFET
Power dissipation
Max. transient thermal impedance
Safe operating area
T
C
=25 ℃
Safe operating area T
C
=80 ℃
I
D
=f(V
DS
); T
C
=25
℃;
V
GS
> 7V;
D=0; parameter t
p
© 2018 Truesemi Semiconductor Corporation
I
D
=f(VDS); TC=80
℃;
VGS > 7V;
D=0; parameter t
p
Ver.B1
3
www.truesemi.com
Typical Performance Characteristics
TSF65R360S2
650V 15A N-Channel SJ-MOSFET
Typ. output
characteristics
T
j
=25
℃
Typ. output
characteristics
T
j
=125
℃
I
D
=f(V
DS
); T
j
=25
℃
; parameter: V
GS
I
D
=f(V
DS
); T
j
=125
℃
; parameter: V
GS
Typ. drain-source on-state resistance
Typ. drain-source on-state resistance
R
DS
(on)=f(I
D
); T
j
=125
℃
;
parameter:V
GS
© 2018 Truesemi Semiconductor Corporation
R
DS
(on)=f(T
j
); I
D
=4.4A; V
GS
=10 V
4
Ver.B1
www.truesemi.com
Typical Performance Characteristics
TSF65R360S2
650V 15A N-Channel SJ-MOSFET
Typ. transfer characteristics
Typ. gate charge
I
D
=f(V
GS
); V
DS
=20V
V
GS
=f(Q
g
), I
D
=4.4 A pulsed
Avalanche energy
Drain-source breakdown voltage
E
AS
=f(T
j
); I
D
=2.4A; V
DD
=50 V
Ver.B1
V
BR(DSS)
=f(T
j
); I
D
=0.25mA
5
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© 2018 Truesemi Semiconductor Corporation
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